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https://doi.org/10.1109/TED.2006.870273
Title: | Hafnium aluminum oxide as charge storage and blocking-oxide layers in SONOS-type nonvolatile memory for high-speed operation | Authors: | Tan, Y.N. Chim, W.K. Choi, W.K. Joo, M.S. Cho, B.J. |
Keywords: | Flash memories Hafnium aluminum oxide Hafnium oxide High dielectric constant (high-k) Polysilicon-oxide-nitride-oxide-silicon (SONOS) |
Issue Date: | Apr-2006 | Citation: | Tan, Y.N., Chim, W.K., Choi, W.K., Joo, M.S., Cho, B.J. (2006-04). Hafnium aluminum oxide as charge storage and blocking-oxide layers in SONOS-type nonvolatile memory for high-speed operation. IEEE Transactions on Electron Devices 53 (4) : 654-662. ScholarBank@NUS Repository. https://doi.org/10.1109/TED.2006.870273 | Abstract: | The charge storage and program/erase mechanisms in polysilicon-oxide-nitride-oxide-silicon (SONOS) memory structures with charge-storage layers of different materials are investigated in this paper. In particular, the use of a HfAlO charge-storage layer in a SONOS-type memory structure is proposed. Compared to other high-k charge-storage layers, HfAlO has the advantage of high-speed program/erase of HfO2 as well as the good charge-retention time of of HfO2 as well as the good charge-retention time of Al2O3, which makes HfAlO a promising candidate for the charge-storage layer in a SONOS-type memory. The use of HfAlO with different HfO2 and Al2O3 compositions as a blocking-oxide layer in SONOS-type structures is also investigated. © 2006 IEEE. | Source Title: | IEEE Transactions on Electron Devices | URI: | http://scholarbank.nus.edu.sg/handle/10635/82443 | ISSN: | 00189383 | DOI: | 10.1109/TED.2006.870273 |
Appears in Collections: | Staff Publications |
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