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|Title:||Hafnium aluminum oxide as charge storage and blocking-oxide layers in SONOS-type nonvolatile memory for high-speed operation||Authors:||Tan, Y.N.
Hafnium aluminum oxide
High dielectric constant (high-k)
|Issue Date:||Apr-2006||Citation:||Tan, Y.N., Chim, W.K., Choi, W.K., Joo, M.S., Cho, B.J. (2006-04). Hafnium aluminum oxide as charge storage and blocking-oxide layers in SONOS-type nonvolatile memory for high-speed operation. IEEE Transactions on Electron Devices 53 (4) : 654-662. ScholarBank@NUS Repository. https://doi.org/10.1109/TED.2006.870273||Abstract:||The charge storage and program/erase mechanisms in polysilicon-oxide-nitride-oxide-silicon (SONOS) memory structures with charge-storage layers of different materials are investigated in this paper. In particular, the use of a HfAlO charge-storage layer in a SONOS-type memory structure is proposed. Compared to other high-k charge-storage layers, HfAlO has the advantage of high-speed program/erase of HfO2 as well as the good charge-retention time of of HfO2 as well as the good charge-retention time of Al2O3, which makes HfAlO a promising candidate for the charge-storage layer in a SONOS-type memory. The use of HfAlO with different HfO2 and Al2O3 compositions as a blocking-oxide layer in SONOS-type structures is also investigated. © 2006 IEEE.||Source Title:||IEEE Transactions on Electron Devices||URI:||http://scholarbank.nus.edu.sg/handle/10635/82443||ISSN:||00189383||DOI:||10.1109/TED.2006.870273|
|Appears in Collections:||Staff Publications|
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