Full Name
Cho Byung-Jin
(not current staff)
Variants
Cho, Byung Jin
CHO, BYUNG JIN
Cho, B.
Cho, B.J.
Cho, B.C.
Cho, Byung-Jin
Byung, J.C.
Cho, B.-J.
 
 
 
Email
elebjcho@nus.edu.sg
 

Refined By:
Author:  Cho, B.J.

Results 101-120 of 151 (Search time: 0.007 seconds).

Issue DateTitleAuthor(s)
101Nov-2004MOS characteristics of substituted Al gate on high-κ dielectricPark, C.S. ; Cho, B.J. ; Kwong, D.-L.
102Nov-2004MOS characteristics of substituted Al gate on high-κ dielectricPark, C.S. ; Cho, B.J. ; Kwong, D.-L.
103Sep-2004MOS Characteristics of synthesized HfAlON-HfO2 stack using AlN-HfO2Park, C.S. ; Cho, B.J. ; Kwong, D.-L.
104Apr-2008Multi-layer high-κ interpoly dielectric for floating gate flash memory devicesZhang, L.; He, W. ; Chan, D.S.H. ; Cho, B.J. 
1052004Multiple-pulse laser annealing of boron-implanted preamorphized silicon and the process optimizationCho, B.J. ; Poon, D.; Tan, L.S. ; Bhat, M.; See, A.
106Mar-2003Multiple-pulse laser annealing of preamorphized silicon for ultrashallow boron junction formationPoon, C.H.; Cho, B.J. ; Lu, Y.F. ; Bhat, M.; See, A.
1072007Novel ZrO2/Si3N4 dual charge storage layer to form step-up potential wells for highly reliable multi-level cell applicationZhang, G.; Wan, S.H.; Bobade, S.M.; Lee, S.-H.; Cho, B.-J. ; Won, J.Y.
10815-Sep-2004Optical properties of SiO x nanostructured films by pulsed-laser deposition at different substrate temperaturesChen, X.Y.; Lu, Y.F.; Wu, Y.H. ; Cho, B.J. ; Song, W.D.; Dai, D.Y.
109Jul-2004Over-erase phenomenon in SONOS-type flash memory and its minimization using a hafnium oxide charge storage layerTan, Y.-N.; Chim, W.-K. ; Cho, B.J. ; Choi, W.-K. 
110Aug-2007P-Type floating gate for retention and P/E window improvement of flash memory devicesShen, C.; Pu, J. ; Li, M.-F. ; Cho, B.J. 
11112-Aug-2002Pattern-induced ripple structures at silicon-oxide/silicon interface by excimer laser irradiationChen, X.Y.; Lu, Y.F. ; Cho, B.J. ; Zeng, Y.P.; Zeng, J.N. ; Wu, Y.H. 
1122003Photoluminescence from Silicon Nanocrystals Formed by Pulsed-Laser DepositionChen, X.Y.; Lu, Y.F.; Wu, Y.H. ; Cho, B.J. ; Song, W.D. ; Hu, H.
1131-Jul-2003Physical and electrical characterization of HfO2 metal-insulator-metal capacitors for Si analog circuit applicationsHu, H.; Zhu, C. ; Lu, Y.F. ; Wu, Y.H. ; Liew, T. ; Li, M.F. ; Cho, B.J. ; Choi, W.K. ; Yakovlev, N.
1141999Predicting plasma charging damage in ultra thin gate oxide by using nondestructive DCIV techniqueGuan, Hao; Li, M.F. ; Zhang, Yaohui ; Cho, B.J. ; Jie, B.B.; Xie, Joseph; Wang, J.L.F. ; Yen, Andrew C. ; Sheng, George T.T.; Dong, Zhong; Li, Weidan
1151999Predicting plasma charging damage in ultra thin gate oxide by using nondestructive DCIV techniqueGuan, Hao; Li, M.F. ; Zhang, Yaohui ; Cho, B.J. ; Jie, B.B.; Xie, Joseph; Wang, J.L.F. ; Yen, Andrew C. ; Sheng, George T.T.; Dong, Zhong; Li, Weidan
1162003Process optimization for multiple-pulses laser annealing for boron implanted silicon with germanium pre-amorphizationPoon, D.; Cho, B.J. ; Lu, Y.F. ; Tan, L.S. ; Bhat, M.; See, A.
117Jun-2003PVD HfO2 for high-precision MIM capacitor applicationsKim, S.J. ; Cho, B.J. ; Li, M.F. ; Yu, X.; Zhu, C. ; Chin, A.; Kwong, D.-L.
1181-Nov-2000Radiation and electrical stress-induced hole trap-assisted tunneling currents in ultrathin gate oxidesAng, C.-H.; Ling, C.-H. ; Cho, B.-J. ; Kim, S.-J. ; Cheng, Z.-Y. 
1191-Nov-2000Radiation and electrical stress-induced hole trap-assisted tunneling currents in ultrathin gate oxidesAng, C.-H.; Ling, C.-H. ; Cho, B.-J. ; Kim, S.-J. ; Cheng, Z.-Y. 
1201999Radiation-induced leakage current of ultra-thin gate oxide under X-ray lithography conditionsCho, Byung Jin ; Kim, Sun Jung ; Ling, C.H. ; Joo, Moon Sig ; Yeo, In Seok