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|Title:||MOS characteristics of substituted Al gate on high-κ dielectric||Authors:||Park, C.S.
|Issue Date:||Nov-2004||Citation:||Park, C.S., Cho, B.J., Kwong, D.-L. (2004-11). MOS characteristics of substituted Al gate on high-κ dielectric. IEEE Electron Device Letters 25 (11) : 725-727. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2004.837537||Abstract:||Substituted aluminum (SA) metal gate on high-κ gate dielectric is successfully demonstrated. Full substitution of polysilicon with Al is achieved for a Ti-Al-polysilicon-HfAlON gate structure by a low-temperature annealing at 450 °C. The SA gate on HfAlON dielectric shows a very low work function of 4.25 eV, which is well suitable for bulk nMOSFETs. The SA process is fully free from the Fermi-level pinning problem. In addition, the SA process also shows improved uniformity in leakage current distribution compared to fully silicided metal gate. © 2004 IEEE.||Source Title:||IEEE Electron Device Letters||URI:||http://scholarbank.nus.edu.sg/handle/10635/56695||ISSN:||07413106||DOI:||10.1109/LED.2004.837537|
|Appears in Collections:||Staff Publications|
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