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Please use this identifier to cite or link to this item: https://doi.org/10.1109/LED.2004.837537
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dc.titleMOS characteristics of substituted Al gate on high-κ dielectric
dc.contributor.authorPark, C.S.
dc.contributor.authorCho, B.J.
dc.contributor.authorKwong, D.-L.
dc.date.accessioned2014-06-17T02:57:34Z
dc.date.available2014-06-17T02:57:34Z
dc.date.issued2004-11
dc.identifier.citationPark, C.S., Cho, B.J., Kwong, D.-L. (2004-11). MOS characteristics of substituted Al gate on high-κ dielectric. IEEE Electron Device Letters 25 (11) : 725-727. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2004.837537
dc.identifier.issn07413106
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/56695
dc.description.abstractSubstituted aluminum (SA) metal gate on high-κ gate dielectric is successfully demonstrated. Full substitution of polysilicon with Al is achieved for a Ti-Al-polysilicon-HfAlON gate structure by a low-temperature annealing at 450 °C. The SA gate on HfAlON dielectric shows a very low work function of 4.25 eV, which is well suitable for bulk nMOSFETs. The SA process is fully free from the Fermi-level pinning problem. In addition, the SA process also shows improved uniformity in leakage current distribution compared to fully silicided metal gate. © 2004 IEEE.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1109/LED.2004.837537
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.doi10.1109/LED.2004.837537
dc.description.sourcetitleIEEE Electron Device Letters
dc.description.volume25
dc.description.issue11
dc.description.page725-727
dc.description.codenEDLED
dc.identifier.isiut000224712000005
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