Please use this identifier to cite or link to this item: https://doi.org/10.1109/LED.2004.837537
DC FieldValue
dc.titleMOS characteristics of substituted Al gate on high-κ dielectric
dc.contributor.authorPark, C.S.
dc.contributor.authorCho, B.J.
dc.contributor.authorKwong, D.-L.
dc.date.accessioned2014-06-17T02:57:34Z
dc.date.available2014-06-17T02:57:34Z
dc.date.issued2004-11
dc.identifier.citationPark, C.S., Cho, B.J., Kwong, D.-L. (2004-11). MOS characteristics of substituted Al gate on high-κ dielectric. IEEE Electron Device Letters 25 (11) : 725-727. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2004.837537
dc.identifier.issn07413106
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/56695
dc.description.abstractSubstituted aluminum (SA) metal gate on high-κ gate dielectric is successfully demonstrated. Full substitution of polysilicon with Al is achieved for a Ti-Al-polysilicon-HfAlON gate structure by a low-temperature annealing at 450 °C. The SA gate on HfAlON dielectric shows a very low work function of 4.25 eV, which is well suitable for bulk nMOSFETs. The SA process is fully free from the Fermi-level pinning problem. In addition, the SA process also shows improved uniformity in leakage current distribution compared to fully silicided metal gate. © 2004 IEEE.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1109/LED.2004.837537
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.doi10.1109/LED.2004.837537
dc.description.sourcetitleIEEE Electron Device Letters
dc.description.volume25
dc.description.issue11
dc.description.page725-727
dc.description.codenEDLED
dc.identifier.isiut000224712000005
Appears in Collections:Staff Publications

Show simple item record
Files in This Item:
There are no files associated with this item.

SCOPUSTM   
Citations

2
checked on May 28, 2020

WEB OF SCIENCETM
Citations

1
checked on May 28, 2020

Page view(s)

46
checked on May 12, 2020

Google ScholarTM

Check

Altmetric


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.