Please use this identifier to cite or link to this item:
|Title:||Radiation and electrical stress-induced hole trap-assisted tunneling currents in ultrathin gate oxides||Authors:||Ang, C.-H.
|Issue Date:||1-Nov-2000||Citation:||Ang, C.-H., Ling, C.-H., Cho, B.-J., Kim, S.-J., Cheng, Z.-Y. (2000-11-01). Radiation and electrical stress-induced hole trap-assisted tunneling currents in ultrathin gate oxides. Solid-State Electronics 44 (11) : 2001-2007. ScholarBank@NUS Repository.||Abstract:||Based on carrier-separation measurement on pMOSFET, we show the existence of hole trap-assisted tunneling (HTAT) current after 10 keV X-ray irradiation on ultrathin gate oxide. The characteristics of this current have been studied in detail and compared with the corresponding current due to electrical stress. No essential difference is found between the HTAT currents due to ionizing radiation and electrical stress. The results indicate that these two currents have similar origin.||Source Title:||Solid-State Electronics||URI:||http://scholarbank.nus.edu.sg/handle/10635/62664||ISSN:||00381101|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on Feb 28, 2018
WEB OF SCIENCETM
checked on Dec 24, 2018
checked on Feb 2, 2019
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.