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Li Ming-Fu

rp01527

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Profile

Full Name
Li Ming-Fu
(not current staff)
Variants
MINGFU, LI
Li, M.-F.
LI, MING FU
MINGFU LI N.
Mingfu, L.
Fu, L.M.
MINGFU LI
Li, M.F.
Li, Ming Fu
Li, M.
Li, M.-f.
 
Main Affiliation
 
Faculty
 
Email
elelimf@nus.edu.sg
 

Publications

Results 201-220 of 300 (Search time: 0.006 seconds).

Issue DateTitleAuthor(s)
20118-Jun-2001Modeling and characterization of direct tunneling hole current through ultrathin gate oxide in p-metal-oxide-semiconductor field-effect transistorsHou, Y.T. ; Li, M.F. ; Lai, W.H.; Jin, Y.
202Feb-2003Modeling of tunneling currents through HfO2 and (HfO2)x(Al2O3)1-x gate stacksHou, Y.T. ; Li, M.F. ; Yu, H.Y. ; Kwong, D.-L.
2032006Modeling study of InSb thin film for advanced III-V MOSFET applicationsZhu, Z.G.; Low, T.; Li, M.F. ; Fan, W.J.; Bai, P.; Kwong, D.L.; Samudra, G. 
204Nov-2005Modeling study of the impact of surface roughness on silicon and germanium UTB MOSFETsLow, T.; Li, M.-F. ; Samudra, G. ; Yeo, Y.-C. ; Zhu, C. ; Chin, A. ; Kwong, D.-L.
2052005Modulation of the Ni FUSI workfunction by Yb doping: From midgap to n-type band-edgeYu, H.Y.; Chen, J.D. ; Li, M.F. ; Lee, S.J. ; Kwong, D.L.; Van Dal, M.; Kittl, J.A.; Lauwers, A.; Augendre, E.; Kubicek, S.; Zhao, C.; Bender, H.; Brijs, B.; Geenen, L.; Benedetti, A.; Absil, P.; Jurczak, M.; Biesemans, S.
206Feb-2007n-MOSFET with silicon-carbon source/drain for enhancement of carrier transportChui, K.-J.; Ang, K.-W.; Balasubramanian, N.; Li, M.-F. ; Samudra, G.S. ; Yeo, Y.-C. 
207Aug-2004N-type Schottky barrier source/drain MOSFET using Ytterbium silicideZhu, S. ; Chen, J. ; Li, M.-F. ; Lee, S.J. ; Singh, J.; Zhu, C.X. ; Du, A.; Tung, C.H.; Chin, A.; Kwong, D.L.
2082004Narrow-band band-pass filters on silicon substrates at 30 GHzYu, D.S.; Cheng, C.F.; Chan, K.T.; Chin, A.; McAlister, S.P.; Zhu, C. ; Li, M.F. ; Kwong, D.L.
2092004Negative U traps in HfO 2 gate dielectrics and frequency dependence of dynamic BTI in MOSFETsShen, C.; Li, M.F. ; Wang, X.P.; Yu, H.Y. ; Feng, Y.P. ; Lim, A.T.-L. ; Yeo, Y.C. ; Chan, D.S.H. ; Kwong, D.L.
2102005Negative- U property of oxygen vacancy in cubic Hf O 2Feng, Y.P. ; Lim, A.T.L. ; Li, M.F. 
2112005Negative- U property of oxygen vacancy in cubic Hf O 2Feng, Y.P. ; Lim, A.T.L. ; Li, M.F. 
2122005Negative- U property of oxygen vacancy in cubic Hf O 2Feng, Y.P. ; Lim, A.T.L. ; Li, M.F. 
2131999New DC voltage-voltage method to measure the interface traps in deep sub-micron MOS transistorsJie, B.B.; Li, M.F. ; Chim, W.K. ; Chan, D.S.H. ; Lo, K.F.
2142005New developments in Schottky source/drain high-k/metal gate CMOS transistorsLi, M.-F. ; Lee, S. ; Zhu, S. ; Li, R.; Chen, J. ; Chin, A. ; Kwong, D.L.
2151997New electron and hole traps in GaAsP alloyTeo, K.L. ; Li, M.F. ; Goo, C.H.; Lau, W.S. ; Lim, Y.T.
2162005New insights in hf based high-k gate dielectrics in mosfetsLi, M.-F. ; Zhu, C. ; Shen, C.; Yu, X.F.; Wang, X.P.; Feng, Y.P. ; Du, A.Y.; Yeo, Y.C. ; Samudra, G. ; Chin, A. ; Kwong, D.L. 
2172009New insights of BTI degradation in MOSFETs with SiON gate dielectricsLi, M.-F. ; Huang, D.; Liu, W.J.; Liu, Z.Y.; Huang, X.Y.
218Oct-2007NMOS compatible work function of TaN metal gate with erbium-oxide-doped hafnium oxide gate dielectricChen, J. ; Wang, X.P.; Li, M.-F. ; Lee, S.J. ; Yu, M.B.; Shen, C.; Yeo, Y.-C. 
219May-1999Nondestructive DCIV method to evaluate plasma charging damage in ultrathin gate oxidesGuan, H.; Zhang, Y.; Jie, B.B.; He, Y.D. ; Li, M.-F. ; Dong, Z.; Xie, J.; Wang, J.L.F.; Yen, A.C.; Sheng, G.T.T.; Li, W.
220May-1999Nondestructive DCIV method to evaluate plasma charging damage in ultrathin gate oxidesGuan, H.; Zhang, Y.; Jie, B.B.; He, Y.D. ; Li, M.-F. ; Dong, Z.; Xie, J.; Wang, J.L.F.; Yen, A.C.; Sheng, G.T.T.; Li, W.