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Title: Modulation of the Ni FUSI workfunction by Yb doping: From midgap to n-type band-edge
Authors: Yu, H.Y.
Chen, J.D. 
Li, M.F. 
Lee, S.J. 
Kwong, D.L.
Van Dal, M.
Kittl, J.A.
Lauwers, A.
Augendre, E.
Kubicek, S.
Zhao, C.
Bender, H.
Brijs, B.
Geenen, L.
Benedetti, A.
Absil, P.
Jurczak, M.
Biesemans, S.
Issue Date: 2005
Citation: Yu, H.Y.,Chen, J.D.,Li, M.F.,Lee, S.J.,Kwong, D.L.,Van Dal, M.,Kittl, J.A.,Lauwers, A.,Augendre, E.,Kubicek, S.,Zhao, C.,Bender, H.,Brijs, B.,Geenen, L.,Benedetti, A.,Absil, P.,Jurczak, M.,Biesemans, S. (2005). Modulation of the Ni FUSI workfunction by Yb doping: From midgap to n-type band-edge. Technical Digest - International Electron Devices Meeting, IEDM 2005 : 630-633. ScholarBank@NUS Repository.
Abstract: The key result in this work is the experimental demonstration that adding Yb to Ni FUSI allows for tuning the work function (WF) from midgap (NiSi ∼4.72eV) to n-type band-edge (∼4.22eV) on thin SiON, maintaining same EOT. In addition, we did not observe any interface adhesion issues found in other reports when WF is modulated by dopants such as As or Sb. We also show that reliability is similar to Ni FUSI. This is a promising technique for nFET gate electrode formation and enables dual gate CMOS technologies for 45nm and beyond in a manufacturable way. © 2005 IEEE.
Source Title: Technical Digest - International Electron Devices Meeting, IEDM
ISBN: 078039268X
ISSN: 01631918
Appears in Collections:Staff Publications

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