Please use this identifier to cite or link to this item:
|Title:||New electron and hole traps in GaAsP alloy||Authors:||Teo, K.L.
|Issue Date:||1997||Citation:||Teo, K.L.,Li, M.F.,Goo, C.H.,Lau, W.S.,Lim, Y.T. (1997). New electron and hole traps in GaAsP alloy. International Journal of Electronics 83 (1) : 29-35. ScholarBank@NUS Repository.||Abstract:||Two electron traps and a hole trap have been observed in vapour phase epitaxial GaAs0.66P0.4 materials by deep level transient spectroscopy. The dominant electron trap A, which has never previously been reported, has a thermal emission activation energy of Ee A = 0.83 eV and an abnormally large capture activation energy Ec A = 0.73 eV. Hole trap C with thermal emission activation energy of Ee C = 0.65 eV is also new and different from previous reports. A critical comparison of traps reported in this work with traps reported in the existing literature is also made. © 1997 Taylor & Francis Ltd.||Source Title:||International Journal of Electronics||URI:||http://scholarbank.nus.edu.sg/handle/10635/80800||ISSN:||00207217|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on Dec 1, 2019
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.