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Title: New electron and hole traps in GaAsP alloy
Authors: Teo, K.L. 
Li, M.F. 
Goo, C.H.
Lau, W.S. 
Lim, Y.T.
Issue Date: 1997
Citation: Teo, K.L.,Li, M.F.,Goo, C.H.,Lau, W.S.,Lim, Y.T. (1997). New electron and hole traps in GaAsP alloy. International Journal of Electronics 83 (1) : 29-35. ScholarBank@NUS Repository.
Abstract: Two electron traps and a hole trap have been observed in vapour phase epitaxial GaAs0.66P0.4 materials by deep level transient spectroscopy. The dominant electron trap A, which has never previously been reported, has a thermal emission activation energy of Ee A = 0.83 eV and an abnormally large capture activation energy Ec A = 0.73 eV. Hole trap C with thermal emission activation energy of Ee C = 0.65 eV is also new and different from previous reports. A critical comparison of traps reported in this work with traps reported in the existing literature is also made. © 1997 Taylor & Francis Ltd.
Source Title: International Journal of Electronics
ISSN: 00207217
Appears in Collections:Staff Publications

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