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Li Ming-Fu

rp01527

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Full Name
Li Ming-Fu
(not current staff)
Variants
MINGFU, LI
Li, M.-F.
LI, MING FU
MINGFU LI N.
Mingfu, L.
Fu, L.M.
MINGFU LI
Li, M.F.
Li, Ming Fu
Li, M.
Li, M.-f.
 
Main Affiliation
 
Faculty
 
Email
elelimf@nus.edu.sg
 

Publications

Results 101-120 of 300 (Search time: 0.005 seconds).

Issue DateTitleAuthor(s)
1018-Jul-2002Energy gap and band alignment for (HfO2)x(Al 2O3)1-x on (100) SiYu, H.Y. ; Li, M.F. ; Cho, B.J. ; Yeo, C.C.; Joo, M.S. ; Kwong, D.-L.; Pan, J.S.; Ang, C.H.; Zheng, J.Z.; Ramanathan, S.
1022004Engineering of voltage nonlinearity in high-K MIM capacitor for analog/mixed-signal ICsKim, S.J. ; Cho, B.J. ; Li, M.-F. ; Ding, S.-J. ; Yu, M.B.; Zhu, C. ; Chin, A.; Kwong, D.-L.
1032004Enhanced performance in 50 nm N-MOSFETs with silicon-carbon source/drain regionsAng, K.W.; Chui, K.J.; Bliznetsov, V.; Du, A.; Balasubramanian, N.; Li, M.F. ; Samudra, G. ; Yeo, Y.-C. 
104Apr-2007Enhanced strain effects in 25-nm gate-length thin-body nMOSFETs with silicon-carbon source/drain and tensile-stress linerAng, K.-W.; Chui, K.-J.; Tung, C.-H.; Balasubramanian, N.; Li, M.-F. ; Samudra, G.S. ; Yeo, Y.-C. 
1052008Enhancement of the flatband modulation of Ni-silicided gates on Hf-based dielectricsYang, J.-J.; Wang, X.-P.; Zhu, C.-X. ; Li, M.-F. ; Yu, H.-Y.; Loh, W.-Y.; Kwong, D.-L. 
106Oct-2004Evidence and understanding of ALD HfO2-Al2O3 laminate MIM capacitors outperforming sandwich counterpartsDing, S.-J. ; Hu, H.; Zhu, C. ; Li, M.F. ; Kim, S.J. ; Cho, B.J. ; Chan, D.S.H. ; Yu, M.B.; Du, A.Y.; Chin, A.; Kwong, D.-L.
10715-Apr-2002Evolution of quasi-breakdown in thin gate oxidesLoh, W.Y. ; Cho, B.J. ; Li, M.F. 
1082007Experimental and simulation study of the Schottky barrier lowering by substrate doping variation for PtSi source/drain SBFETsLousberg, G.P.; Yu, H.Y.; Froment, B.; Li, M.F. ; Augendre, E.; De Keersgieter, A.; Demeurisse, C.; Brus, S.; Degroote, B.; Hoffmann, T.; Lauwers, A.; DePotter, M.; Kubicek, S.; Anil, K.; Absil, P.; Jurczak, M.; Biesemans, S.
109May-2001Experimental evidence of interface-controlled mechanism of quasi-breakdown in ultrathin gate oxideGuan, H.; Cho, B.J. ; Li, M.F. ; Xu, Z.; He, Y.D. ; Dong, Z.
11014-Apr-2003Extended Arrhenius law of time-to-breakdown of ultrathin gate oxidesXu, M.; Tan, C.; Li, M. 
11Feb-2006Fabrication of poly-Si TFT with silicided Schottky barrier source/drain, high-κ gate dielectric and metal gateZhu, S. ; Singh, J.; Zhu, C. ; Du, A.; Li, M.F. 
122005Fast and slow dynamic NBTI components in p-MOSFET with SiON dielectric and their impact on device life-time and circuit applicationYang, T.; Li, M.F. ; Shen, C.; Ang, C.H.; Zhu, C. ; Yeo, Y.C. ; Samudra, G. ; Rustagi, S.C.; Yu, M.B.; Kwong, D.L.
13Nov-2005Fast DNBTI components in p-MOSFET with SiON dielectricYang, T.; Shen, C.; Li, M.F. ; Ang, C.H.; Zhu, C.X. ; Yeo, Y.-C. ; Samudra, G. ; Rustagi, S.C.; Yu, M.B.; Kwong, D.-L.
14Dec-2006Fast Vth instability in HfO2 gate dielectric MOSFETs and its impact on digital circuitsShen, C.; Yang, T.; Li, M.-F. ; Wang, X.; Foo, C.E.; Samudra, G.S. ; Yeo, Y.-C. ; Kwong, D.-L.
152006Fast Vth instability in HfO2 gate dielectric MOSFETs and Its impact on digital circuitsShen, C.; Yang, T.; Li, M.-F. ; Samudra, G. ; Yeo, Y.-C. ; Zhu, C.X. ; Rustagi, S.C.; Yut, M.B.; Kwong, D.-L.
16May-2004Fermi pinning-induced thermal instability of metal-gate work functionsYu, H.Y. ; Ren, C.; Yeo, Y.-C. ; Kang, J.F. ; Wang, X.P.; Ma, H.H.H. ; Li, M.-F. ; Chan, D.S.H. ; Kwong, D.-L.
17Mar-2004Fermi-Level Pinning Induced Thermal Instability in the Effective Work Function of TaN in TaN/SiO 2 Gate StackRen, C.; Yu, H.Y. ; Kang, J.F. ; Hou, Y.T. ; Li, M.-F. ; Wang, W.D.; Chan, D.S.H. ; Kwong, D.-L.
182005First principle study of Si and Ge band structure for UTB MOSFETs applicationsLow, T.; Feng, Y.P. ; Li, M.F. ; Samudra, G. ; Yeo, Y.C. ; Bai, P.; Chan, L.; Kwong, D.L.
19Jul-2009Flat band voltage control on low Vt metal-gate/high-κ CMOSFETs with small EOT (Invited Paper)Chin, A.; Chang, M.F.; Lin, S.H.; Chen, W.B.; Lee, P.T.; Yeh, F.S.; Liao, C.C.; Li, M.-F. ; Su, N.C.; Wang, S.J.
202004Frequency dependent dynamic charge trapping in HfO 2 and threshold voltage instability in MOSFETsShen, C.; Yu, H.Y. ; Wang, X.P.; Li, M.-F. ; Yeo, Y.-C. ; Chan, D.S.H. ; Bera, K.L.; Kwong, D.L.