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https://doi.org/10.1063/1.1566460
| Title: | Extended Arrhenius law of time-to-breakdown of ultrathin gate oxides | Authors: | Xu, M. Tan, C. Li, M. |
Issue Date: | 14-Apr-2003 | Citation: | Xu, M., Tan, C., Li, M. (2003-04-14). Extended Arrhenius law of time-to-breakdown of ultrathin gate oxides. Applied Physics Letters 82 (15) : 2482-2484. ScholarBank@NUS Repository. https://doi.org/10.1063/1.1566460 | Abstract: | A stress-induced double-donor conductivity model to investigate the temperature dependence of time-to-breakdown in ultrathin gate oxides was discussed. It was found that the breakdown occurred when the permittivity-to-breakdown reached a critical value. The overall temperature dependence of time-to-breakdown was found to be described in terms of the extended Arrhenius law. | Source Title: | Applied Physics Letters | URI: | http://scholarbank.nus.edu.sg/handle/10635/55972 | ISSN: | 00036951 | DOI: | 10.1063/1.1566460 |
| Appears in Collections: | Staff Publications |
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