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|Title:||Extended Arrhenius law of time-to-breakdown of ultrathin gate oxides|
|Citation:||Xu, M., Tan, C., Li, M. (2003-04-14). Extended Arrhenius law of time-to-breakdown of ultrathin gate oxides. Applied Physics Letters 82 (15) : 2482-2484. ScholarBank@NUS Repository. https://doi.org/10.1063/1.1566460|
|Abstract:||A stress-induced double-donor conductivity model to investigate the temperature dependence of time-to-breakdown in ultrathin gate oxides was discussed. It was found that the breakdown occurred when the permittivity-to-breakdown reached a critical value. The overall temperature dependence of time-to-breakdown was found to be described in terms of the extended Arrhenius law.|
|Source Title:||Applied Physics Letters|
|Appears in Collections:||Staff Publications|
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