Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.1566460
Title: Extended Arrhenius law of time-to-breakdown of ultrathin gate oxides
Authors: Xu, M.
Tan, C.
Li, M. 
Issue Date: 14-Apr-2003
Source: Xu, M., Tan, C., Li, M. (2003-04-14). Extended Arrhenius law of time-to-breakdown of ultrathin gate oxides. Applied Physics Letters 82 (15) : 2482-2484. ScholarBank@NUS Repository. https://doi.org/10.1063/1.1566460
Abstract: A stress-induced double-donor conductivity model to investigate the temperature dependence of time-to-breakdown in ultrathin gate oxides was discussed. It was found that the breakdown occurred when the permittivity-to-breakdown reached a critical value. The overall temperature dependence of time-to-breakdown was found to be described in terms of the extended Arrhenius law.
Source Title: Applied Physics Letters
URI: http://scholarbank.nus.edu.sg/handle/10635/55972
ISSN: 00036951
DOI: 10.1063/1.1566460
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