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Li Ming-Fu

rp01527

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Full Name
Li Ming-Fu
(not current staff)
Variants
MINGFU, LI
Li, M.-F.
LI, MING FU
MINGFU LI N.
Mingfu, L.
Fu, L.M.
MINGFU LI
Li, M.F.
Li, Ming Fu
Li, M.
Li, M.-f.
 
Main Affiliation
 
Faculty
 
Email
elelimf@nus.edu.sg
 

Publications

Results 181-200 of 300 (Search time: 0.005 seconds).

Issue DateTitleAuthor(s)
18128-Feb-2005Lattice strain analysis of transistor structures with silicon-germanium and silicon-carbon sourcedrain stressorsAng, K.-W.; Chui, K.-J.; Bliznetsov, V.; Tung, C.-H.; Du, A.; Balasubramanian, N.; Samudra, G. ; Li, M.F. ; Yeo, Y.-C. 
182Jan-2004Light Emission Near 1.3 μm Using ITO-Al 2O 3-Si 0.3Ge 0.7-Si Tunnel DiodesLin, C.Y.; Chin, A.; Hou, Y.T. ; Li, M.F. ; McAlister, S.P.; Kwong, D.L.
1831-Jan-1993Linearity improvement of CMOS transconductors for low supply applicationsLi, M.F. ; Chen, X.; Lim, Y.C. 
184Apr-2003Localized oxide degradation in ultrathin gate dielectric and its statistical analysisLoh, W.Y. ; Cho, B.J. ; Li, M.F. ; Chan, D.S.H. ; Ang, C.H.; Zheng, J.Z.; Kwong, D.L.
185Oct-2004Low temperature MOSFET technology with Schottky barrier source/drain, high-K gate dielectric and metal gate electrodeZhu, S. ; Yu, H.Y. ; Chen, J.D. ; Whang, S.J. ; Chen, J.H. ; Shen, C.; Zhu, C. ; Lee, S.J. ; Li, M.F. ; Chan, D.S.H. ; Yoo, W.J. ; Du, A.; Tung, C.H.; Singh, J.; Chin, A.; Kwong, D.L.
1862008Low Vt gate-first Al/TaN/[Ir3Si-HfSi 2-x]/HfLaON CMOS using simple laser annealing/reflectionLiao, C.C.; Chin, A.; Su, N.C.; Li, M.-F. ; Wang, S.J.
18713-Jun-2007Low work function metal alloyYU HONGYU; JINGDE CHEN ; MINGFU LI ; KWONG DIM-LEE ; BIESEMANS SERGE
18815-Nov-2006Low work function metal alloyYU HONGYU; JINGDE CHEN N. ; MINGFU LI N. ; KWONG DIM-LEE ; BIESEMANS SERGE; KITTL JORGE ADRIAN
18915-Aug-2007Low work function metal alloyYU HONGYU; JINGDE CHEN N. ; MINGFU LI N. ; KWONG DIM-LEE ; BIESEMANS SERGE; KITTL JORGE ADRIAN
1902004Low workfunction fully suicided gate on SiO2/Si and LaAlO 3/GOI n-MOSFETsYu, D.S.; Chin, A.; Hung, B.F.; Chen, W.J.; Zhu, C.X. ; Li, M.-F. ; Zhu, S.Y. ; Kwong, D.L.
1912003Material and electrical characterization of HfO2 films for MIM capacitors applicationHu, H.; Zhu, C. ; Lu, Y.F. ; Wu, Y.H. ; Liew, T. ; Li, M.F. ; Cho, B.J. ; Choi, W.K. ; Yakovlev, N.
1921999Material properties of GaN grown by MOCVDLiu, W.; Li, M.-F. ; Feng, Z.-C.; Chua, S.-J. ; Akutsu, N.; Matsumoto, K.
193Nov-2004Metal gate work function engineering on gate leakage of MOSFETsHou, Y.-T. ; Li, M.-F. ; Low, T.; Kwong, D.-L.
1942006Metal-insulator-metal capacitors using atomic-layer-deposited Al 2O3/HfO2/Al2O3 sandwiched dielectrics for wireless communicationsDing, S.-J.; Huang, Y.-J.; Li, Y.; Zhang, D.W.; Zhu, C. ; Li, M.-F. 
195Sep-2005Metal-insulator-metal RF bypass capacitor using niobium oxide (Nb2O5) with HfO2/Al2O3 barriersKim, S.-J. ; Cho, B.J. ; Yu, M.B.; Li, M.-F. ; Xiong, Y.-Z.; Zhu, C. ; Chin, A. ; Kwong, D.-L.
19617-Mar-2009Method of forming a Yb-doped Ni full silicidation low work function gate electrode for n-MOSFETYU, HONGYU ; JINGDE, CHEN ; MINGFU, LI ; KWONG, DIM-LEE ; BIESEMANS, SERGE; KITTL, JORGE ADRIAN
1972003Microwave coplanar filters on Si substratesChan, K.T.; Chin, A.; Kuo, J.T.; Chang, C.Y.; Duh, D.S.; Lin, W.J.; Zhu, C. ; Li, M.F. ; Kwong, D.-L.
198Feb-2003MIM capacitors using atomic-layer-deposited high-κ (HfO2)1-x(Al2O3)x dielectricsHu, H.; Zhu, C. ; Yu, X.; Chin, A. ; Li, M.F. ; Cho, B.J. ; Kwong, D.-L.; Foo, P.D.; Yu, M.B.; Liu, X.; Winkler, J.
1992003MIM capacitors with HfO2 and HfAlOx for Si RF and analog applicationsYu, X.; Zhu, C. ; Hu, H.; Chin, A.; Li, M.F. ; Cho, B.J. ; Kwong, D.-L.; Foo, P.D.; Yu, M.B.
200Jul-2004Mobility enhancement in TaN metal-gate MOSFETs using tantalum incorporated HfO2 gate dielectricYu, X.; Zhu, C. ; Li, M.F. ; Chin, A.; Yu, M.B.; Du, A.Y.; Kwong, D.-L.