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|Title:||Low workfunction fully suicided gate on SiO2/Si and LaAlO 3/GOI n-MOSFETs||Authors:||Yu, D.S.
|Issue Date:||2004||Citation:||Yu, D.S.,Chin, A.,Hung, B.F.,Chen, W.J.,Zhu, C.X.,Li, M.-F.,Zhu, S.Y.,Kwong, D.L. (2004). Low workfunction fully suicided gate on SiO2/Si and LaAlO 3/GOI n-MOSFETs. Device Research Conference - Conference Digest, DRC : 21-22. ScholarBank@NUS Repository. https://doi.org/10.1109/DRC.2004.1367763||Abstract:||A low workfunction NiSi:Hf and NiTiSi gate that were integrated onto SiO2/Si, novel high-κ LaAlO3/GOI n-MOSFETs, were developed. The Hf or TiSi is for low workfunction control and NiSi is for low resistivity. This separate workfunction control and achieved low resistivity allows applying various silicided gates for low resistive dual workfunction gate technology. Workfunctions of 4.3 and 4.2eV are obtained for NiTiSi and NiSi:Hf due to the interface TiSi and Hf control, which deals for n-MOSFETs.||Source Title:||Device Research Conference - Conference Digest, DRC||URI:||http://scholarbank.nus.edu.sg/handle/10635/83910||ISBN:||0780382846||ISSN:||15483770||DOI:||10.1109/DRC.2004.1367763|
|Appears in Collections:||Staff Publications|
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