Low workfunction fully suicided gate on SiO2/Si and LaAlO 3/GOI n-MOSFETs

Please use this identifier to cite or link to this item: https://doi.org/10.1109/DRC.2004.1367763

Title:	Low workfunction fully suicided gate on SiO2/Si and LaAlO 3/GOI n-MOSFETs
Authors:	Yu, D.S. Chin, A. Hung, B.F. Chen, W.J. Zhu, C.X. Li, M.-F. Zhu, S.Y. Kwong, D.L.
Issue Date:	2004
Citation:	Yu, D.S.,Chin, A.,Hung, B.F.,Chen, W.J.,Zhu, C.X.,Li, M.-F.,Zhu, S.Y.,Kwong, D.L. (2004). Low workfunction fully suicided gate on SiO2/Si and LaAlO 3/GOI n-MOSFETs. Device Research Conference - Conference Digest, DRC : 21-22. ScholarBank@NUS Repository. https://doi.org/10.1109/DRC.2004.1367763
Abstract:	A low workfunction NiSi:Hf and NiTiSi gate that were integrated onto SiO2/Si, novel high-κ LaAlO3/GOI n-MOSFETs, were developed. The Hf or TiSi is for low workfunction control and NiSi is for low resistivity. This separate workfunction control and achieved low resistivity allows applying various silicided gates for low resistive dual workfunction gate technology. Workfunctions of 4.3 and 4.2eV are obtained for NiTiSi and NiSi:Hf due to the interface TiSi and Hf control, which deals for n-MOSFETs.
Source Title:	Device Research Conference - Conference Digest, DRC
URI:	http://scholarbank.nus.edu.sg/handle/10635/83910
ISBN:	0780382846
ISSN:	15483770
DOI:	10.1109/DRC.2004.1367763
Appears in Collections:	Staff Publications

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