Please use this identifier to cite or link to this item:
|Title:||Low workfunction fully suicided gate on SiO2/Si and LaAlO 3/GOI n-MOSFETs||Authors:||Yu, D.S.
|Issue Date:||2004||Citation:||Yu, D.S.,Chin, A.,Hung, B.F.,Chen, W.J.,Zhu, C.X.,Li, M.-F.,Zhu, S.Y.,Kwong, D.L. (2004). Low workfunction fully suicided gate on SiO2/Si and LaAlO 3/GOI n-MOSFETs. Device Research Conference - Conference Digest, DRC : 21-22. ScholarBank@NUS Repository. https://doi.org/10.1109/DRC.2004.1367763||Abstract:||A low workfunction NiSi:Hf and NiTiSi gate that were integrated onto SiO2/Si, novel high-κ LaAlO3/GOI n-MOSFETs, were developed. The Hf or TiSi is for low workfunction control and NiSi is for low resistivity. This separate workfunction control and achieved low resistivity allows applying various silicided gates for low resistive dual workfunction gate technology. Workfunctions of 4.3 and 4.2eV are obtained for NiTiSi and NiSi:Hf due to the interface TiSi and Hf control, which deals for n-MOSFETs.||Source Title:||Device Research Conference - Conference Digest, DRC||URI:||http://scholarbank.nus.edu.sg/handle/10635/83910||ISBN:||0780382846||ISSN:||15483770||DOI:||10.1109/DRC.2004.1367763|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on May 14, 2019
checked on May 21, 2019
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.