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Title: Light Emission Near 1.3 μm Using ITO-Al 2O 3-Si 0.3Ge 0.7-Si Tunnel Diodes
Authors: Lin, C.Y.
Chin, A.
Hou, Y.T. 
Li, M.F. 
McAlister, S.P.
Kwong, D.L.
Keywords: Al 2O 3
Light-emitting device (LED)
Issue Date: Jan-2004
Citation: Lin, C.Y., Chin, A., Hou, Y.T., Li, M.F., McAlister, S.P., Kwong, D.L. (2004-01). Light Emission Near 1.3 μm Using ITO-Al 2O 3-Si 0.3Ge 0.7-Si Tunnel Diodes. IEEE Photonics Technology Letters 16 (1) : 36-38. ScholarBank@NUS Repository.
Abstract: We have fabricated Sn:In 2O 3 (ITO)-Al 2O 3 dielectric on Si 1-xGe x-Si metal-oxide-semiconductor tunnel diodes which emit light at around 1.3 μm, for x = 0.7. The emitted photon energy is smaller than the bandgap energy of Si, thus, avoiding strong light absorption by the Si substrate. The optical device structure is compatible with that of a metal-oxide-semiconductor field-effect transistor, since a conventional doped poly-Si gate electrode will be transparent to the emitted light. Increasing the Ge composition from 0.3 to 0.4 only slightly decreases the light-emitting efficiency.
Source Title: IEEE Photonics Technology Letters
ISSN: 10411135
DOI: 10.1109/LPT.2003.818922
Appears in Collections:Staff Publications

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