Light Emission Near 1.3 μm Using ITO-Al 2O 3-Si 0.3Ge 0.7-Si Tunnel Diodes

Please use this identifier to cite or link to this item: https://doi.org/10.1109/LPT.2003.818922

Title:	Light Emission Near 1.3 μm Using ITO-Al 2O 3-Si 0.3Ge 0.7-Si Tunnel Diodes
Authors:	Lin, C.Y. Chin, A. Hou, Y.T. Li, M.F. McAlister, S.P. Kwong, D.L.
Keywords:	Al 2O 3 Electroluminescence Light Light-emitting device (LED) SiGe
Issue Date:	Jan-2004
Citation:	Lin, C.Y., Chin, A., Hou, Y.T., Li, M.F., McAlister, S.P., Kwong, D.L. (2004-01). Light Emission Near 1.3 μm Using ITO-Al 2O 3-Si 0.3Ge 0.7-Si Tunnel Diodes. IEEE Photonics Technology Letters 16 (1) : 36-38. ScholarBank@NUS Repository. https://doi.org/10.1109/LPT.2003.818922
Abstract:	We have fabricated Sn:In 2O 3 (ITO)-Al 2O 3 dielectric on Si 1-xGe x-Si metal-oxide-semiconductor tunnel diodes which emit light at around 1.3 μm, for x = 0.7. The emitted photon energy is smaller than the bandgap energy of Si, thus, avoiding strong light absorption by the Si substrate. The optical device structure is compatible with that of a metal-oxide-semiconductor field-effect transistor, since a conventional doped poly-Si gate electrode will be transparent to the emitted light. Increasing the Ge composition from 0.3 to 0.4 only slightly decreases the light-emitting efficiency.
Source Title:	IEEE Photonics Technology Letters
URI:	http://scholarbank.nus.edu.sg/handle/10635/82622
ISSN:	10411135
DOI:	10.1109/LPT.2003.818922
Appears in Collections:	Staff Publications

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