Please use this identifier to cite or link to this item:
https://doi.org/10.1109/LPT.2003.818922
| Title: | Light Emission Near 1.3 μm Using ITO-Al 2O 3-Si 0.3Ge 0.7-Si Tunnel Diodes | Authors: | Lin, C.Y. Chin, A. Hou, Y.T. Li, M.F. McAlister, S.P. Kwong, D.L. |
Keywords: | Al 2O 3 Electroluminescence Light Light-emitting device (LED) SiGe |
Issue Date: | Jan-2004 | Citation: | Lin, C.Y., Chin, A., Hou, Y.T., Li, M.F., McAlister, S.P., Kwong, D.L. (2004-01). Light Emission Near 1.3 μm Using ITO-Al 2O 3-Si 0.3Ge 0.7-Si Tunnel Diodes. IEEE Photonics Technology Letters 16 (1) : 36-38. ScholarBank@NUS Repository. https://doi.org/10.1109/LPT.2003.818922 | Abstract: | We have fabricated Sn:In 2O 3 (ITO)-Al 2O 3 dielectric on Si 1-xGe x-Si metal-oxide-semiconductor tunnel diodes which emit light at around 1.3 μm, for x = 0.7. The emitted photon energy is smaller than the bandgap energy of Si, thus, avoiding strong light absorption by the Si substrate. The optical device structure is compatible with that of a metal-oxide-semiconductor field-effect transistor, since a conventional doped poly-Si gate electrode will be transparent to the emitted light. Increasing the Ge composition from 0.3 to 0.4 only slightly decreases the light-emitting efficiency. | Source Title: | IEEE Photonics Technology Letters | URI: | http://scholarbank.nus.edu.sg/handle/10635/82622 | ISSN: | 10411135 | DOI: | 10.1109/LPT.2003.818922 |
| Appears in Collections: | Staff Publications |
Show full item record
Files in This Item:
There are no files associated with this item.
SCOPUSTM
Citations
6
checked on Mar 1, 2021
WEB OF SCIENCETM
Citations
7
checked on Mar 1, 2021
Page view(s)
61
checked on Mar 1, 2021
Google ScholarTM
Check
Altmetric
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.