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|Title:||Light Emission Near 1.3 μm Using ITO-Al 2O 3-Si 0.3Ge 0.7-Si Tunnel Diodes||Authors:||Lin, C.Y.
|Keywords:||Al 2O 3
Light-emitting device (LED)
|Issue Date:||Jan-2004||Citation:||Lin, C.Y., Chin, A., Hou, Y.T., Li, M.F., McAlister, S.P., Kwong, D.L. (2004-01). Light Emission Near 1.3 μm Using ITO-Al 2O 3-Si 0.3Ge 0.7-Si Tunnel Diodes. IEEE Photonics Technology Letters 16 (1) : 36-38. ScholarBank@NUS Repository. https://doi.org/10.1109/LPT.2003.818922||Abstract:||We have fabricated Sn:In 2O 3 (ITO)-Al 2O 3 dielectric on Si 1-xGe x-Si metal-oxide-semiconductor tunnel diodes which emit light at around 1.3 μm, for x = 0.7. The emitted photon energy is smaller than the bandgap energy of Si, thus, avoiding strong light absorption by the Si substrate. The optical device structure is compatible with that of a metal-oxide-semiconductor field-effect transistor, since a conventional doped poly-Si gate electrode will be transparent to the emitted light. Increasing the Ge composition from 0.3 to 0.4 only slightly decreases the light-emitting efficiency.||Source Title:||IEEE Photonics Technology Letters||URI:||http://scholarbank.nus.edu.sg/handle/10635/82622||ISSN:||10411135||DOI:||10.1109/LPT.2003.818922|
|Appears in Collections:||Staff Publications|
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