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Samudra,Ganesh S

rp00141

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Full Name
Samudra,Ganesh S
Variants
Samudra, G.G.
SAMUDRA, GANESH SHANKAR
Samudra', G.S.
Samudra, Ganesh S.
Samudra, Ganesh Shankar
Shankar Samudra, Ganesh
Samudra, G.S.
Samudra, Ganesh
Samudra, G.
 
Main Affiliation
 
Faculty
 
Email
eleshanr@nus.edu.sg
 

Publications

Refined By:
Author:  Samudra, G.
Department:  ELECTRICAL AND COMPUTER ENGINEERING
Department:  ELECTRICAL & COMPUTER ENGINEERING

Results 121-140 of 235 (Search time: 0.011 seconds).

Issue DateTitleAuthor(s)
121Feb-2007N-channel FinFETs with 25-nm gate length and Schottky-Barrier source and drain featuring Ytterbium silicideLee, R.T.P. ; Lim, A.E.-J.; Tan, K.-M.; Liow, T.-Y.; Lo, G.-Q.; Samudra, G.S. ; Chi, D.Z.; Yeo, Y.-C. 
1222008N-channel MOSFETs with embedded silicon-carbon source/drain stressors formed using cluster-carbon implant and excimer-laser-induced solid phase epitaxyKoh, S.-M.; Sekar, K.; Lee, D.; Krull, W.; Wang, X.; Samudra, G.S. ; Yeo, Y.-C. 
123Feb-2007n-MOSFET with silicon-carbon source/drain for enhancement of carrier transportChui, K.-J.; Ang, K.-W.; Balasubramanian, N.; Li, M.-F. ; Samudra, G.S. ; Yeo, Y.-C. 
1242008N-xhannel GaAs MOSFET with TaNHfAlO gate stack formed using in situ vacuum anneal and silane passivationChin, H.-C.; Zhu, M. ; Samudra, G.S. ; Yeo, Y.-C. 
1252005New insights in hf based high-k gate dielectrics in mosfetsLi, M.-F. ; Zhu, C. ; Shen, C.; Yu, X.F.; Wang, X.P.; Feng, Y.P. ; Du, A.Y.; Yeo, Y.C. ; Samudra, G. ; Chin, A. ; Kwong, D.L. 
1262011New Tellurium implant and segregation for contact resistance reduction and single metallic silicide technology for independent contact resistance optimization in n- and p-FinFETsKoh, S.-M.; Kong, E.Y.J.; Liu, B.; Ng, C.-M.; Liu, P.; Mo, Z.-Q.; Leong, K.-C.; Samudra, G.S. ; Yeo, Y.-C. 
1272008Nickel-aluminum alloy silicides with high aluminum content for contact resistance reduction and integration in n-channel field-effect transistorsKoh, A.T.-Y.; Lee, R.T.-P. ; Lim, A.E.-J.; Lai, D.M.-Y.; Chi, D.-Z.; Hoe, K.-M.; Balasubramanian, N.; Samudra, G.S. ; Yeo, Y.-C. 
128Jan-2008Nickel-silicide: Carbon contact technology for N-channel MOSFETs with silicon-carbon source/drainLee, R.T.P. ; Yang, L.-T.; Liow, T.-Y.; Tan, K.-M.; Lim, A.E.-J.; Ang, K.-W.; Lai, D.M.Y.; Hoe, K.M.; Lo, G.-Q.; Samudra, G.S. ; Chi, D.Z.; Yeo, Y.-C. 
129Nov-2004Nonvolatile flash memory device using Ge nanocrystals embedded in HfAlO High-κ tunneling and control oxides: Device fabrication and electrical performanceChen, J.H. ; Wang, Y.Q.; Yoo, W.J. ; Yeo, Y.-C. ; Samudra, G. ; Chan, D.S.H. ; Du, A.Y.; Kwong, D.-L.
1302008Novel and cost-efficient single metallic silicide integration solution with dual Schottky-barrier achieved by aluminum inter-diffusion for FinFET CMOS technology with enhanced performanceLee, R.T.-P. ; Koh, A.T.-Y.; Fang, W.-W.; Tan, K.-M.; Lim, A.E.-J.; Liow, T.-Y.; Chow, S.-Y.; Yong, A.M.; Hoong, S.W.; Lo, G.-Q.; Samudra, G.S. ; Chi, D.-Z.; Yeo, Y.-C. 
1312007Novel epitaxial nickel aluminide-silicide with low Schottky-Barrier and series resistance for enhanced performance of dopant-segregated source/drain N-channel MuGFETsLee, R.T.P. ; Liow, T.-Y.; Tan, K.-M.; Lim, A.E.-J.; Ho, C.-S.; Hoe, K.-M.; Lai, M.Y.; Osipowicz, T. ; Lo, G.-Q.; Samudra, G. ; Chi, D.-Z.; Yeo, Y.-C. 
13225-Apr-2008Novel extended-Pi shaped silicon - germanium source/drain stressors for strain and performance enhancement in p-channel tri-gate fin-type field-effect transistorTan, K.-M.; Liow, T.-Y.; Lee, R.T.P. ; Zhu, M. ; Hoe, K.-M.; Tung, C.-H.; Balasubramanian, N.; Samudra, G.S. ; Yeo, Y.-C. 
1332006Novel nickel-alloy suicides for source/drain contact resistance reduction in N-channel multiple-gate transistors with sub-35nm gate lengthLee, R.T.P. ; Liow, T.-Y.; Tan, K.-M.; Lim, A.E.-J.; Wong, H.-S.; Lim, P.-C.; Lai, D.M.Y.; Lo, G.-Q.; Tung, C.-H.; Samudra, G. ; Chi, D.-Z.; Yeo, Y.-C. 
1342008Novel rare-earth dielectric interlayers for wide NMOS work-function tunability in Ni-FUSI gatesLim, A.E.-J.; Lee, R.T.P. ; Samudra, G.S. ; Kwong, D.-L.; Yeo, Y.-C. 
1352011Novel technique to engineer aluminum profile at nickel-silicide/silicon: carbon interface for contact resistance reduction, and integration in strained N-MOSFETs with silicon-carbon stressorsKoh, S.-M.; Zhou, Q. ; Thanigaivelan, T.; Henry, T.; Samudra, G.S. ; Yeo, Y.C. 
1362011Novel tellurium co-implantation and segregation for effective source/drain contact resistance reduction and gate work function modulation in n-FinFETsKoh, S.-M.; Ding, Y.; Guo, C.; Leong, K.-C.; Samudra, G.S. ; Yeo, Y.-C. 
1372013Numerical analysis of p+ emitters passivated by a PECVD AlO x/SiNx stackMa, F.-J. ; Duttagupta, S.; Peters, M.; Samudra, G.S. ; Aberle, A.G. ; Hoex, B.
1382013Numerical modelling of silicon p+ emitters passivated by a PECVD AlOx/SiNx stackMa, F.-J.; Duttagupta, S.; Peters, M.; Samudra, G.S. ; Aberle, A.G. ; Hoex, B. 
1392008On the impact ionization in double-gate MOSFET using full band monte carlo methodBai, P.; Chang, K.; Kajen, R.S.; Li, E.; Samudra, G. 
1402007On the performance limit of impact-ionization transistorsShen, C.; Lin, J.-Q.; Toh, E.-H.; Chang, K.-F.; Bait, P.; Heng, C.-H. ; Samudra, G.S. ; Yeo, Y.-C.