Novel and cost-efficient single metallic silicide integration solution with dual Schottky-barrier achieved by aluminum inter-diffusion for FinFET CMOS technology with enhanced performance

Abstract

We have developed a novel and cost-efficient silicide integration solution to achieve a hole barrier height of 215 meV and electron barrier height of 665 meV simultaneously with a single metallic silicide based on aluminum inter-diffusion. It is proposed that aluminum diffuses into PtSi and forms an alloy, which lowers the electron barrier height of PtSi due to a change in the intrinsic PtSi workfunction. Additionally, we have integrated platinum germanosilicide with an ultra-low hole barrier height of 215 meV in P-FinFETs to provide a 21% enhancement in drive current performance, which is attributed to the 20 % reduction in series resistance. We have also ascertained the compatibility of PtSiGe with laser thermal annealing for further performance enhancement. © 2008 IEEE.