Please use this identifier to cite or link to this item:
|Title:||Novel epitaxial nickel aluminide-silicide with low Schottky-Barrier and series resistance for enhanced performance of dopant-segregated source/drain N-channel MuGFETs||Authors:||Lee, R.T.P.
|Issue Date:||2007||Citation:||Lee, R.T.P., Liow, T.-Y., Tan, K.-M., Lim, A.E.-J., Ho, C.-S., Hoe, K.-M., Lai, M.Y., Osipowicz, T., Lo, G.-Q., Samudra, G., Chi, D.-Z., Yeo, Y.-C. (2007). Novel epitaxial nickel aluminide-silicide with low Schottky-Barrier and series resistance for enhanced performance of dopant-segregated source/drain N-channel MuGFETs. Digest of Technical Papers - Symposium on VLSI Technology : 108-109. ScholarBank@NUS Repository. https://doi.org/10.1109/VLSIT.2007.4339746||Abstract:||We have developed a novel epitaxial nickel-aluminide suicide (NiSi 2-x Alx) to reduce the Schottky-Barrier height (SBH) and series resistance in n-channel MuGFETs with dopant-segregated Schottky-Barrier source/drain (DSS). 10% substitutional incorporation of Al in the Si matrix at the silicide-Si interface leads to a 37% reduction in the intrinsic SBH of nickel suicide. A further 42% effective reduction in the DSS SBH was attained with the combination of NiSi2-xAlx and DSS technology. Saturation drive current enhancement of 94 % for NiSi2-xAl x DSS MuGFETs over NiSi DSS MuGFETs was achieved, attributed to SBH lowering, series resistance reduction and possibly silicide strain effects. As a result, an excellent drive current of 882 μA/μm at VGS-V, Vτ = 1.2 V was achieved for NiSÍ2-x,Al x DSS MuGFETs with 55 nm gate length.||Source Title:||Digest of Technical Papers - Symposium on VLSI Technology||URI:||http://scholarbank.nus.edu.sg/handle/10635/84017||ISSN:||07431562||DOI:||10.1109/VLSIT.2007.4339746|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on Oct 16, 2020
WEB OF SCIENCETM
checked on Oct 9, 2020
checked on Oct 4, 2020
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.