Please use this identifier to cite or link to this item: https://doi.org/10.1109/VLSIT.2007.4339746
Title: Novel epitaxial nickel aluminide-silicide with low Schottky-Barrier and series resistance for enhanced performance of dopant-segregated source/drain N-channel MuGFETs
Authors: Lee, R.T.P. 
Liow, T.-Y.
Tan, K.-M.
Lim, A.E.-J.
Ho, C.-S.
Hoe, K.-M.
Lai, M.Y.
Osipowicz, T. 
Lo, G.-Q.
Samudra, G. 
Chi, D.-Z.
Yeo, Y.-C. 
Issue Date: 2007
Source: Lee, R.T.P., Liow, T.-Y., Tan, K.-M., Lim, A.E.-J., Ho, C.-S., Hoe, K.-M., Lai, M.Y., Osipowicz, T., Lo, G.-Q., Samudra, G., Chi, D.-Z., Yeo, Y.-C. (2007). Novel epitaxial nickel aluminide-silicide with low Schottky-Barrier and series resistance for enhanced performance of dopant-segregated source/drain N-channel MuGFETs. Digest of Technical Papers - Symposium on VLSI Technology : 108-109. ScholarBank@NUS Repository. https://doi.org/10.1109/VLSIT.2007.4339746
Abstract: We have developed a novel epitaxial nickel-aluminide suicide (NiSi 2-x Alx) to reduce the Schottky-Barrier height (SBH) and series resistance in n-channel MuGFETs with dopant-segregated Schottky-Barrier source/drain (DSS). 10% substitutional incorporation of Al in the Si matrix at the silicide-Si interface leads to a 37% reduction in the intrinsic SBH of nickel suicide. A further 42% effective reduction in the DSS SBH was attained with the combination of NiSi2-xAlx and DSS technology. Saturation drive current enhancement of 94 % for NiSi2-xAl x DSS MuGFETs over NiSi DSS MuGFETs was achieved, attributed to SBH lowering, series resistance reduction and possibly silicide strain effects. As a result, an excellent drive current of 882 μA/μm at VGS-V, Vτ = 1.2 V was achieved for NiSÍ2-x,Al x DSS MuGFETs with 55 nm gate length.
Source Title: Digest of Technical Papers - Symposium on VLSI Technology
URI: http://scholarbank.nus.edu.sg/handle/10635/84017
ISSN: 07431562
DOI: 10.1109/VLSIT.2007.4339746
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