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|Title:||On the impact ionization in double-gate MOSFET using full band monte carlo method||Authors:||Bai, P.
|Keywords:||Breakdown onset voltages
Gate oxide reliability
Monte carlo method
|Issue Date:||2008||Citation:||Bai, P.,Chang, K.,Kajen, R.S.,Li, E.,Samudra, G. (2008). On the impact ionization in double-gate MOSFET using full band monte carlo method. 2008 8th IEEE Conference on Nanotechnology, IEEE-NANO : 335-338. ScholarBank@NUS Repository. https://doi.org/10.1109/NANO.2008.105||Abstract:||We predict the impact ionization in a 13nm gate length double-gate MOSFET structures using full-band self-consistent ensemble Monte Carlo method with quantum correction. The effects of various design parameters such as gate oxide thickness, body thickness and channel length on the impact ionization onset voltages are investigated. The studies show that the reduction of channel length reduction remains as the major contributor to the impact ionization phenomena. On analyzing the distribution of impact ionization events in the structure, impact ionization induced hot carrier activity is shown to be largely confined to the channel-drain interface region. This allows for possible gate oxide hot carriers reliability issues to be greatly reduced through an optimal design. © 2008 IEEE.||Source Title:||2008 8th IEEE Conference on Nanotechnology, IEEE-NANO||URI:||http://scholarbank.nus.edu.sg/handle/10635/71229||ISBN:||9781424421046||DOI:||10.1109/NANO.2008.105|
|Appears in Collections:||Staff Publications|
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