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Choi, W.K.

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Full Name
Choi, W.K.
Variants
Choi, W.-K.
Choi Wee Kion
Choi, Wee kiong
Choi, W.K
Choi, W.
Choi Wee Kiong
Choi, W.K.
 
Faculty
 
Email
elechoi@nus.edu.sg
 

Publications

Refined By:
Date Issued:  [2000 TO 2009]

Results 41-60 of 115 (Search time: 0.005 seconds).

Issue DateTitleAuthor(s)
412007Full range workfunction tunning of MOSFETs using interfacial yttrium layer in fully germanided Ni gateYu, H.P.; Pey, K.L.; Choi, W.K. ; Antoniadis, D.A.; Fitzgerald, E.A.; Dawood, M.K.; Ow, K.Q.; Chi, D.Z.
424-Apr-2005Germanium diffusion and nanocrystal formation in silicon oxide on silicon substrate under rapid thermal annealingChoi, W.K. ; Ho, V.; Ng, V. ; Ho, Y.W.; Ng, S.P.; Chim, W.K. 
43Apr-2006Hafnium aluminum oxide as charge storage and blocking-oxide layers in SONOS-type nonvolatile memory for high-speed operationTan, Y.N.; Chim, W.K. ; Choi, W.K. ; Joo, M.S. ; Cho, B.J. 
44Aug-2001High quality gate dielectrics grown by rapid thermal processing using split-N 2O technique on strained-Si 0.91Ge 0.09 filmsBera, L.K. ; Choi, W.K. ; Tan, C.S.; Samanta, S.K.; Maiti, C.K.
452004High-K HfAlO charge trapping layer in SONOS-type nonvolatile memory device for high speed operationTan, Y.N.; Chim, W.K. ; Choi, W.K. ; Joo, M.S. ; Ng, T.H.; Cho, B.J. 
4615-May-2005Highly oriented Ni(Pd)SiGe formation at 400 °cJin, L.J.; Pey, K.L.; Choi, W.K. ; Fitzgerald, E.A.; Antoniadis, D.A.; Pitera, A.J.; Lee, M.L.; Tung, C.H.
4715-May-2005Highly oriented Ni(Pd)SiGe formation at 400 °cJin, L.J.; Pey, K.L.; Choi, W.K. ; Fitzgerald, E.A.; Antoniadis, D.A.; Pitera, A.J.; Lee, M.L.; Tung, C.H.
4820-Nov-2002ICP etching and structure study of PECVD SiC filmsShi, J. ; Choi, W.K. ; Chor, E.F. 
4920-Mar-2002ICP etching of RF sputtered and PECVD silicon carbide filmsShi, J. ; Chor, E.F. ; Choi, W.K. 
5016-Dec-2005In situ transmission electron microscopy study on the formation and evolution of germanium nanoclusters and nanoparticles in silicon oxide matrixChoi, W.K. ; Foo, Y.L.; Ho, V.; Nath, R.
5114-Feb-2007Influence of reductant and germanium concentration on the growth and stress development of germanium nanocrystals in silicon oxide matrixChew, H.G.; Zheng, F.; Choi, W.K. ; Chim, W.K. ; Foo, Y.L.; Fitzgerald, E.A.
522008Influence of substrate geometry on the distribution and stress on Ge nanocrystals in silicon oxide matrixZheng, F.; Choi, W.K. ; Liew, T.H. 
5315-Apr-2003Interfacial and bulk properties of zirconium dioxide as a gate dielectric in metal-insulator-semiconductor structures and current transport mechanismsChim, W.K. ; Ng, T.H.; Koh, B.H.; Choi, W.K. ; Zheng, J.X.; Tung, C.H.; Du, A.Y.
541-Jul-2002Interfacial reactions of Ni on Si 1-xGe x (x=0.2,0.3) at low temperature by rapid thermal annealingZhao, H.B.; Pey, K.L. ; Choi, W.K. ; Chattopadhyay, S.; Fitzgerald, E.A.; Antoniadis, D.A.; Lee, P.S.
552008Investigation of effect of germanium on the crystallization process of hafnium aluminum oxide matrixZheng, F.; Choi, W.K. ; Chew, H.G.; Chan, L.
5618-May-2001Investigation of Ge nanocrystal formation in SiO2-Ge-SiO2 sandwich structureChoi, W.K. ; Ng, V. ; Swee, V.S.L.; Ong, C.S.; Yu, M.B.; Rusli; Yoon, S.F.
5715-Apr-2004Investigation of thermal effect on electrical properties of Si 0.887Ge0.113 and Si0.887-yGe 0.113Cy filmsFeng, W.; Choi, W.K. 
5820-Mar-2002Investigation on oxide growth mechanism of PECVD silicon carbide filmsChoi, W.K. ; Leoy, C.C.; Lee, L.P.
5915-Mar-2000Investigations on the morphology of silicon surfaces anisotropically etched with TMAHThong, J.T.L. ; Bai, Y. ; Luo, P.; Choi, W.K. 
6015-Mar-2000Investigations on the morphology of silicon surfaces anisotropically etched with TMAHThong, J.T.L. ; Bai, Y. ; Luo, P.; Choi, W.K.