Please use this identifier to cite or link to this item:
https://doi.org/10.1063/1.1561995
| Title: | Interfacial and bulk properties of zirconium dioxide as a gate dielectric in metal-insulator-semiconductor structures and current transport mechanisms | Authors: | Chim, W.K. Ng, T.H. Koh, B.H. Choi, W.K. Zheng, J.X. Tung, C.H. Du, A.Y. |
Issue Date: | 15-Apr-2003 | Citation: | Chim, W.K., Ng, T.H., Koh, B.H., Choi, W.K., Zheng, J.X., Tung, C.H., Du, A.Y. (2003-04-15). Interfacial and bulk properties of zirconium dioxide as a gate dielectric in metal-insulator-semiconductor structures and current transport mechanisms. Journal of Applied Physics 93 (8) : 4788-4793. ScholarBank@NUS Repository. https://doi.org/10.1063/1.1561995 | Abstract: | The interfacial and bulk properties of zirconium dioxide as a gate dielectric in metal-insulator-semiconductor structures and current transport mechansims were studied. The electric field in the interfacial layer was found to be larger with respect to the electric field in the bulk ZrO2. The results showed the dependence of injecting field at the cathode on the electric field in the interfacial layer of the materials. | Source Title: | Journal of Applied Physics | URI: | http://scholarbank.nus.edu.sg/handle/10635/82560 | ISSN: | 00218979 | DOI: | 10.1063/1.1561995 |
| Appears in Collections: | Staff Publications |
Show full item record
Files in This Item:
There are no files associated with this item.
SCOPUSTM
Citations
41
checked on Jan 19, 2022
WEB OF SCIENCETM
Citations
39
checked on Jan 19, 2022
Page view(s)
124
checked on Jan 20, 2022
Google ScholarTM
Check
Altmetric
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.