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https://doi.org/10.1149/1.2890420
Title: | Investigation of effect of germanium on the crystallization process of hafnium aluminum oxide matrix | Authors: | Zheng, F. Choi, W.K. Chew, H.G. Chan, L. |
Issue Date: | 2008 | Citation: | Zheng, F.,Choi, W.K.,Chew, H.G.,Chan, L. (2008). Investigation of effect of germanium on the crystallization process of hafnium aluminum oxide matrix. ECS Transactions 11 (17) : 11-17. ScholarBank@NUS Repository. https://doi.org/10.1149/1.2890420 | Abstract: | Germanium (Ge) nanocrystals have been successfully synthesized in the hafnium aluminum oxide (HfAlO) matrix via co-sputtering and furnace annealing. The crystallization process of the HfAlO film has been studied using a combination of Raman spectroscopy, transmission electron microscopy, secondary ions mass spectrometry and X-Ray diffraction techniques. It was found that 800°C is the ideal annealing temperature for synthesis of Ge nanocrystals in HfAlO matrix. A higher the annealing temperature will result in significant Ge outdiffusion and thus no formation of the nanocrystals. In addition, for the sample with relatively high Ge content (∼23.3%) in the HfAlO matrix, a noteworthy Ge outdiffusion and the crystallization of the film were observed even upon the annealing at 800°C. The crystallographic phase of the film was found to favor the orthorhombic phase. © The Electrochemical Society. | Source Title: | ECS Transactions | URI: | http://scholarbank.nus.edu.sg/handle/10635/70677 | ISBN: | 9781605601908 | ISSN: | 19385862 | DOI: | 10.1149/1.2890420 |
Appears in Collections: | Staff Publications |
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