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Title: Interfacial reactions of Ni on Si 1-xGe x (x=0.2,0.3) at low temperature by rapid thermal annealing
Authors: Zhao, H.B.
Pey, K.L. 
Choi, W.K. 
Chattopadhyay, S.
Fitzgerald, E.A.
Antoniadis, D.A.
Lee, P.S.
Issue Date: 1-Jul-2002
Citation: Zhao, H.B., Pey, K.L., Choi, W.K., Chattopadhyay, S., Fitzgerald, E.A., Antoniadis, D.A., Lee, P.S. (2002-07-01). Interfacial reactions of Ni on Si 1-xGe x (x=0.2,0.3) at low temperature by rapid thermal annealing. Journal of Applied Physics 92 (1) : 214-217. ScholarBank@NUS Repository.
Abstract: The interfacial reaction of Ni with relaxed Si 1-xGe x (x=0.2,0.3) films in the low temperature range, viz., 300-500°C, has been investigated and compared with that of Ni with Si (i.e., x=0). Ni 2(Si 1-xGe x) and Ni 3(Si 1-xGe x) 2 were observed at 300°C whereas a uniform film of Ni(Si 1-xGe x) was formed at 400°C for both Si 0.8Ge 0.2 and Si 0.7Ge 0.3 substrates. At 500°C, a mixed layer consisting of Ni(Si 1-yGe y) and Si 1-zGe z was formed with a relation of z>x>y. Sheet resistance measurement results show that the silicided film attains its lowest value at an annealing temperature of 400°C. The approximate values of the resistivity of the corresponding uniform Ni(Si 1-xGe x) (x=0.2,0.3) derived from the transmission electron microscope and sheet resistance results are 19 and 23 μcm, respectively. © 2002 American Institute of Physics.
Source Title: Journal of Applied Physics
ISSN: 00218979
DOI: 10.1063/1.1482423
Appears in Collections:Staff Publications

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