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|Title:||Interfacial reactions of Ni on Si 1-xGe x (x=0.2,0.3) at low temperature by rapid thermal annealing||Authors:||Zhao, H.B.
|Issue Date:||1-Jul-2002||Citation:||Zhao, H.B., Pey, K.L., Choi, W.K., Chattopadhyay, S., Fitzgerald, E.A., Antoniadis, D.A., Lee, P.S. (2002-07-01). Interfacial reactions of Ni on Si 1-xGe x (x=0.2,0.3) at low temperature by rapid thermal annealing. Journal of Applied Physics 92 (1) : 214-217. ScholarBank@NUS Repository. https://doi.org/10.1063/1.1482423||Abstract:||The interfacial reaction of Ni with relaxed Si 1-xGe x (x=0.2,0.3) films in the low temperature range, viz., 300-500°C, has been investigated and compared with that of Ni with Si (i.e., x=0). Ni 2(Si 1-xGe x) and Ni 3(Si 1-xGe x) 2 were observed at 300°C whereas a uniform film of Ni(Si 1-xGe x) was formed at 400°C for both Si 0.8Ge 0.2 and Si 0.7Ge 0.3 substrates. At 500°C, a mixed layer consisting of Ni(Si 1-yGe y) and Si 1-zGe z was formed with a relation of z>x>y. Sheet resistance measurement results show that the silicided film attains its lowest value at an annealing temperature of 400°C. The approximate values of the resistivity of the corresponding uniform Ni(Si 1-xGe x) (x=0.2,0.3) derived from the transmission electron microscope and sheet resistance results are 19 and 23 μcm, respectively. © 2002 American Institute of Physics.||Source Title:||Journal of Applied Physics||URI:||http://scholarbank.nus.edu.sg/handle/10635/82561||ISSN:||00218979||DOI:||10.1063/1.1482423|
|Appears in Collections:||Staff Publications|
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