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dc.titleInterfacial reactions of Ni on Si 1-xGe x (x=0.2,0.3) at low temperature by rapid thermal annealing
dc.contributor.authorZhao, H.B.
dc.contributor.authorPey, K.L.
dc.contributor.authorChoi, W.K.
dc.contributor.authorChattopadhyay, S.
dc.contributor.authorFitzgerald, E.A.
dc.contributor.authorAntoniadis, D.A.
dc.contributor.authorLee, P.S.
dc.identifier.citationZhao, H.B., Pey, K.L., Choi, W.K., Chattopadhyay, S., Fitzgerald, E.A., Antoniadis, D.A., Lee, P.S. (2002-07-01). Interfacial reactions of Ni on Si 1-xGe x (x=0.2,0.3) at low temperature by rapid thermal annealing. Journal of Applied Physics 92 (1) : 214-217. ScholarBank@NUS Repository.
dc.description.abstractThe interfacial reaction of Ni with relaxed Si 1-xGe x (x=0.2,0.3) films in the low temperature range, viz., 300-500°C, has been investigated and compared with that of Ni with Si (i.e., x=0). Ni 2(Si 1-xGe x) and Ni 3(Si 1-xGe x) 2 were observed at 300°C whereas a uniform film of Ni(Si 1-xGe x) was formed at 400°C for both Si 0.8Ge 0.2 and Si 0.7Ge 0.3 substrates. At 500°C, a mixed layer consisting of Ni(Si 1-yGe y) and Si 1-zGe z was formed with a relation of z>x>y. Sheet resistance measurement results show that the silicided film attains its lowest value at an annealing temperature of 400°C. The approximate values of the resistivity of the corresponding uniform Ni(Si 1-xGe x) (x=0.2,0.3) derived from the transmission electron microscope and sheet resistance results are 19 and 23 μcm, respectively. © 2002 American Institute of Physics.
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.sourcetitleJournal of Applied Physics
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