Interfacial reactions of Ni on Si 1-xGe x (x=0.2,0.3) at low temperature by rapid thermal annealing

Abstract

The interfacial reaction of Ni with relaxed Si 1-xGe x (x=0.2,0.3) films in the low temperature range, viz., 300-500°C, has been investigated and compared with that of Ni with Si (i.e., x=0). Ni 2(Si 1-xGe x) and Ni 3(Si 1-xGe x) 2 were observed at 300°C whereas a uniform film of Ni(Si 1-xGe x) was formed at 400°C for both Si 0.8Ge 0.2 and Si 0.7Ge 0.3 substrates. At 500°C, a mixed layer consisting of Ni(Si 1-yGe y) and Si 1-zGe z was formed with a relation of z>x>y. Sheet resistance measurement results show that the silicided film attains its lowest value at an annealing temperature of 400°C. The approximate values of the resistivity of the corresponding uniform Ni(Si 1-xGe x) (x=0.2,0.3) derived from the transmission electron microscope and sheet resistance results are 19 and 23 μcm, respectively. © 2002 American Institute of Physics.