Please use this identifier to cite or link to this item:
|Title:||Full range workfunction tunning of MOSFETs using interfacial yttrium layer in fully germanided Ni gate||Authors:||Yu, H.P.
|Issue Date:||2007||Citation:||Yu, H.P.,Pey, K.L.,Choi, W.K.,Antoniadis, D.A.,Fitzgerald, E.A.,Dawood, M.K.,Ow, K.Q.,Chi, D.Z. (2007). Full range workfunction tunning of MOSFETs using interfacial yttrium layer in fully germanided Ni gate. ECS Transactions 6 (1) : 271-277. ScholarBank@NUS Repository. https://doi.org/10.1149/1.2727410||Abstract:||In this work, the tuning of the nickel fully germanided metal gate workfunction via a Y/Ge/Ni gate stack structure was demonstrated. By varying the yttrium interlayer thickness from 0 to 9.6nm, a full range of workfunction tuning from 5.11eV to 3.8eV can be achieved. We showed that the chemical potential of the material adjacent to the gate electrode/gate insulator plays an important role in the determination of the workfunction. The gate stack is thermally stable up to 500°C annealing. © The Electrochemical Society.||Source Title:||ECS Transactions||URI:||http://scholarbank.nus.edu.sg/handle/10635/70390||ISBN:||9781566775502||ISSN:||19385862||DOI:||10.1149/1.2727410|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on Apr 20, 2019
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.