Highly oriented Ni(Pd)SiGe formation at 400 °c

Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.1899759

Title:	Highly oriented Ni(Pd)SiGe formation at 400 °c
Authors:	Jin, L.J. Pey, K.L. Choi, W.K. Fitzgerald, E.A. Antoniadis, D.A. Pitera, A.J. Lee, M.L. Tung, C.H.
Issue Date:	15-May-2005
Citation:	Jin, L.J., Pey, K.L., Choi, W.K., Fitzgerald, E.A., Antoniadis, D.A., Pitera, A.J., Lee, M.L., Tung, C.H. (2005-05-15). Highly oriented Ni(Pd)SiGe formation at 400 °c. Journal of Applied Physics 97 (10) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.1899759
Abstract:	A germanosilicide technology employing Ni0.95Pd0.05 alloy to improve the germanosilicide film texture strucutre on relaxed Si1-xGex substrate has been developed. Highly oriented (Ni0.95 Pd0.05) y (Si1-x Gex) 1-y films where x=0.2, 0.25, 0.3, and y≈0.5 are obtained at 400 °C annealing with (200) as the preferred orientation, as was revealed by cross-sectional transmission electron microscopy and x-ray diffraction results. The formation of the highly oriented (Ni0.95 Pd0.05) y (Si1-x Gex) 1-y film can be explained by interface and surface energies minimization due to the addition of Pd. © 2005 American Institute of Physics.
Source Title:	Journal of Applied Physics
URI:	http://scholarbank.nus.edu.sg/handle/10635/56199
ISSN:	00218979
DOI:	10.1063/1.1899759
Appears in Collections:	Staff Publications

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