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|Title:||Investigation on oxide growth mechanism of PECVD silicon carbide films||Authors:||Choi, W.K.
|Issue Date:||20-Mar-2002||Citation:||Choi, W.K.,Leoy, C.C.,Lee, L.P. (2002-03-20). Investigation on oxide growth mechanism of PECVD silicon carbide films. International Journal of Modern Physics B 16 (6-7) : 1062-1066. ScholarBank@NUS Repository.||Abstract:||The effect of the Si-C, Si-CH3, C-Hn, Si-H and Si dangling bonds on the oxidation process was investigated by monitoring the changes of these bands as a function of oxidation temperature or duration using the infrared spectroscopy technique. We concluded that the activation energy obtained from the linear regime of the oxide growth is related to the C-Hn bonds. We suggested that most of the C-Hn bonds were bonded to Si with n = 3, that gave rise to voids to facilitate the oxidation of amorphous silicon carbide films.||Source Title:||International Journal of Modern Physics B||URI:||http://scholarbank.nus.edu.sg/handle/10635/83865||ISSN:||02179792|
|Appears in Collections:||Staff Publications|
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