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Yee Chia Yeo

rp09882

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Full Name
Yee Chia Yeo
Variants
Yeo, Y.
Yeo Y.-C.
Yeo, Y.C.
Yeo, Y.-C.
Yeo., Y.-C.
 
Main Affiliation
 
Faculty
 
Email
eleyeoyc@nus.edu.sg
 

Publications

Refined By:
Date Issued:  [2000 TO 2023]
Type:  Article
Date Issued:  [2000 TO 2009]

Results 41-60 of 128 (Search time: 0.007 seconds).

Issue DateTitleAuthor(s)
4128-Jun-2004Formation of Ge nanocrystals in HfAlO high-k dielectric and application in memory deviceWang, Y.Q.; Chen, J.H. ; Yoo, W.J. ; Yeo, Y.-C. ; Kim, S.J. ; Gupta, R.; Tan, Z.Y.L.; Kwong, D.-L.; Du, A.Y.; Balasubramanian, N.
42Apr-2006Full silicidation of silicon gate electrodes using nickel-terbium alloy for MOSFET applicationsLim, A.E.-J.; Lee, R.T.P. ; Tung, C.H.; Tripathy, S.; Kwong, D.-L.; Yeo, Y.-C. 
43May-2003Fully silicided NiSi gate on La2O3 MOSFETsLin, C.Y.; Ma, M.W.; Chin, A.; Yeo, Y.C. ; Zhu, C. ; Li, M.F. ; Kwong, D.-L.
44Jul-2008Germanium source and drain stressors for ultrathin-body and nanowire field-effect transistorsLiow, T.-Y.; Tan, K.-M.; Lee, R.T.P. ; Zhu, M. ; Tan, B.L.-H.; Balasubramanian, N.; Yeo, Y.-C. 
452001Growing cascade correlation networks in two dimensions: A heuristic approachSu, L.; Guan, S.U. ; Yeo, Y.C. 
462006High quality silicon-germanium-on-insulator wafers fabricated using cyclical thermal oxidation and annealingWang, G.H.; Toh, E.-H.; Foo, Y.-L.; Tung, C.-H.; Choy, S.-F.; Samudra, G. ; Yeo, Y.-C. 
47Nov-2007Hot-carrier effects in strained n-channel transistor with silicon-carbon (Si1-yCy) source/drain stressors and its orientation dependenceAng, K.-W.; Wan, C.; Balasubramanian, N.; Samudra, G.S. ; Yeo, Y.-C. 
48Dec-2006I-MOS transistor with an elevated silicon-germanium impact-ionization region for bandgap engineeringToh, E.-H.; Wang, G.H.; Chan, L.; Lo, G.-Q.; Samudra, G. ; Yeo, Y.-C. 
492007Impact of interfacial dipole on effective work function of nickel fully silicided gate electrodes formed on rare-earth-based dielectric interlayersLim, A.E.-J.; Fang, W.-W.; Liu, F.; Lee, R.T.P. ; Samudra, G. ; Kwong, D.-L. ; Yeo, Y.-C. 
50Apr-2005Improved electrical and reliability characteristics of hfn-hfo2-gated nMOSFET with 0.95-nm EOT fabricated using a gate-first processKang, F.J.; Yu, H.Y. ; Ren, C.; Wang, X.P.; Li, M.-F. ; Chan, D.S.H. ; Yeo, Y.-C. ; Sa, N.; Yang, H.; Liu, X.Y.; Han, R.Q.; Kwong, D.-L.
512007In situ silane passivation of gallium arsenide and deposition of high-permittivity gate dielectric for MOS applicationsZhu, M. ; Chin, H.-C.; Tung, C.-H.; Yeo, Y.-C. 
52Jun-2008In situ surface passivation and CMOS-compatible palladium-germanium contacts for surface-channel gallium arsenide MOSFETsChin, H.-C.; Zhu, M. ; Tung, C.-H.; Samudra, G.S. ; Yeo, Y.-C. 
532007Incorporation of tin in boron doped silicon for reduced deactivation of boron during post-laser-anneal rapid thermal processingLiu, F.; Tan, K.-M.; Wang, X.; Low, D.K.Y.; Lai, D.M.Y.; Lim, P.C.; Samudra, G. ; Yeo, Y.-C. 
542001Incremental self-growing neural networks with the changing environmentSu, L.; Guan, S.U. ; Yeo, Y.C. 
553-Dec-2007Injection-induced de-doping in a conducting polymer during device operation: Asymmetry in the hole injection and extraction ratesChia, P.-J. ; Chua, L.-L. ; Sivaramakrishnan, S. ; Zhuo, J.-M. ; Zhao, L.-H.; Sim, W.-S. ; Yeo, Y.-C. ; Ho, P.K.-H. 
56Oct-2005Interface trap passivation effect in NBTI measurement for p-MOSFET with SiON gate dielectricYang, T.; Shen, C.; Li, M.F. ; Ang, C.H.; Zhu, C.X. ; Yeo, Y.-C. ; Samudra, G. ; Kwong, D.-L.
572005Investigation of silicon-germanium fins fabricated using germanium condensation on vertical compliant structuresLiow, T.-Y.; Tan, K.-M.; Yeo, Y.-C. ; Agarwal, A.; Du, A.; Tung, C.-H.; Balasubramanian, N.
58Aug-2008Laser annealing of amorphous germanium on silicon-germanium source/drain for strain and performance enhancement in pMOSFETsLiu, F.; Wong, H.-S.; Ang, K.-W.; Zhu, M. ; Wang, X.; Lai, D.M.-Y.; Lim, P.-C.; Yeo, Y.-C. 
5928-Feb-2005Lattice strain analysis of transistor structures with silicon-germanium and silicon-carbon sourcedrain stressorsAng, K.-W.; Chui, K.-J.; Bliznetsov, V.; Tung, C.-H.; Du, A.; Balasubramanian, N.; Samudra, G. ; Li, M.F. ; Yeo, Y.-C. 
602009Lattice-mismatched In0.4Ga0.6As Source/Drain stressors with In Situ doping for strained In0.53 Ga0.47 as channel n-MOSFETsChin, H.-C.; Gong, X.; Liu, X.; Yeo, Y.-C.