Full Name
Ling Chung Ho
(not current staff)
Variants
Ling, C.-H.
Ling, C.
Ling, C.H.
Ling, Chung Ho
Ling, Chung-Ho
 
 
 
Email
eleling@nus.edu.sg
 

Publications

Refined By:
Date Issued:  [1905 TO 1999]

Results 21-40 of 72 (Search time: 0.006 seconds).

Issue DateTitleAuthor(s)
21Aug-1995Effects of measurement frequency and temperature anneal on differential gate capacitance spectra observed in hot carrier stressed MOSFET'sLing, C.H. ; Ang, D.S. ; Tan, S.E.
221-Dec-1996Effects of tungsten polycidation on the hot-carrier degradation in buried-channel LDD p-MOSFET'sAng, D.S. ; Ling, C.H. 
231996Effects of tungsten silicidation on Fowler-Nordheim tunnelling current and charge trapping in polysilicon-oxide-silicon capacitorsLing, C.H. ; Ooi, J.A.; Ang, D.S. 
24Jul-1985Electron and hole quasi-fermi levels in the vicinity of a grain boundary under uniform illumination: An approximate method of computationLing, C.H. ; Kwok, C.Y.
251-Oct-1993Electron trapping and interface state generation in PMOSFET's: Results from gate capacitanceLing, C.H. 
2615-Feb-1996Extraction of channel length in 0.1 μm NMOSFET by gate to drain capacitanceLing, C.H. ; Ang, D.S. ; Dutoit, M.
271997Fowler-nordheim stress degradation in gate oxide: Results from gate-to-drain capacitance and charge pumping currentLing, C.H. ; Goh, Y.H.; Ooi, J.A.
28Sep-1986Frequency dependence of MOS capacitance in strong inversion and at elevated temperaturesLing, C.H. ; Kwok, C.Y.; Chan, E.G.; Tay, T.M.
29Sep-1986Frequency dependence of MOS capacitance in strong inversion and at elevated temperaturesLing, C.H. ; Kwok, C.Y.; Chan, E.G.; Tay, T.M.
301997Hot carrier degradation study in PMOSFET using gated-diode drain current and charge pumping measurementsGoh, Y.H.; Ling, C.H. 
311997Hot carrier degradation study in PMOSFET using gated-diode drain current and charge pumping measurementsGoh, Y.H.; Ling, C.H. 
32Jul-1994Hot-electron degradation in NMOSFET's: Results from temperature annealLing, C.H. ; Ah, L.K.; Choi, W.K. ; Tan, S.E.; Ang, D.S. 
331-Jan-1993Interfacial polarization in Al-Y2O3-SiO2-Si capacitorLing, C.H. 
341-Jan-1993Logarithmic time dependence of pMOSFET degradation observed from gate capacitanceLing, C.H. ; Yeow, Y.T.; Ah, L.K.; Yung, W.H.; Choi, W.K. 
351-Jan-1993Logarithmic time dependence of pMOSFET degradation observed from gate capacitanceLing, C.H. ; Yeow, Y.T.; Ah, L.K.; Yung, W.H.; Choi, W.K. 
36May-1995Measurement and simulation of hot carrier degradation in PMOSFET by gate capacitanceLing, C.H. ; Seah, B.P.; Samudra, Ganesh S. ; Gan, Chock H.
3710-Aug-1993Measurement of the current transient in Ta2O5 filmsSundaram, K.; Choi, W.K. ; Ling, C.H. 
381989New multiple-function logic familyTan, Y.K.; Lim, Y.C. ; Kwok, C.Y.; Ling, C.H. 
391989New multiple-function logic familyTan, Y.K.; Lim, Y.C. ; Kwok, C.Y.; Ling, C.H. 
401987Observation of a high-resistance to a low-resistance transition in a silicon bicrystalLing, C.H.