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|Title:||Effects of tungsten silicidation on Fowler-Nordheim tunnelling current and charge trapping in polysilicon-oxide-silicon capacitors||Authors:||Ling, C.H.
|Issue Date:||1996||Citation:||Ling, C.H.,Ooi, J.A.,Ang, D.S. (1996). Effects of tungsten silicidation on Fowler-Nordheim tunnelling current and charge trapping in polysilicon-oxide-silicon capacitors. Electronics Letters 32 (10) : 933-934. ScholarBank@NUS Repository.||Abstract:||Results of Fowler-Nordheim current stress are compared for tungsten polycided and non-polycided gate MOS capacitors. An initial high pre-tunnelling current, decreasing with subsequent gate bias scan, is reported for non-polycided device tunnelling from the gate. This is attributed to the charging of oxide electron traps. A temperature anneal at 200°C demonstrates that these traps are rechargeable.||Source Title:||Electronics Letters||URI:||http://scholarbank.nus.edu.sg/handle/10635/62103||ISSN:||00135194|
|Appears in Collections:||Staff Publications|
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