Please use this identifier to cite or link to this item: http://scholarbank.nus.edu.sg/handle/10635/62103
Title: Effects of tungsten silicidation on Fowler-Nordheim tunnelling current and charge trapping in polysilicon-oxide-silicon capacitors
Authors: Ling, C.H. 
Ooi, J.A.
Ang, D.S. 
Keywords: MOS capacitors
Tunnelling
Issue Date: 1996
Source: Ling, C.H.,Ooi, J.A.,Ang, D.S. (1996). Effects of tungsten silicidation on Fowler-Nordheim tunnelling current and charge trapping in polysilicon-oxide-silicon capacitors. Electronics Letters 32 (10) : 933-934. ScholarBank@NUS Repository.
Abstract: Results of Fowler-Nordheim current stress are compared for tungsten polycided and non-polycided gate MOS capacitors. An initial high pre-tunnelling current, decreasing with subsequent gate bias scan, is reported for non-polycided device tunnelling from the gate. This is attributed to the charging of oxide electron traps. A temperature anneal at 200°C demonstrates that these traps are rechargeable.
Source Title: Electronics Letters
URI: http://scholarbank.nus.edu.sg/handle/10635/62103
ISSN: 00135194
Appears in Collections:Staff Publications

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