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|Title:||Extraction of channel length in 0.1 μm NMOSFET by gate to drain capacitance||Authors:||Ling, C.H.
|Issue Date:||15-Feb-1996||Citation:||Ling, C.H.,Ang, D.S.,Dutoit, M. (1996-02-15). Extraction of channel length in 0.1 μm NMOSFET by gate to drain capacitance. Electronics Letters 32 (4) : 402-404. ScholarBank@NUS Repository.||Abstract:||Applying a 100kHz, 25mV signal to the drain of a MOSFET, and measuring the resultant current at the gate, a gate to drain capacitance is obtained, from which the effective channel length can be extracted. This technique has been successively applied to a 0.1 × 2 μm2 device.||Source Title:||Electronics Letters||URI:||http://scholarbank.nus.edu.sg/handle/10635/80412||ISSN:||00135194|
|Appears in Collections:||Staff Publications|
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