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Title: Extraction of channel length in 0.1 μm NMOSFET by gate to drain capacitance
Authors: Ling, C.H. 
Ang, D.S. 
Dutoit, M.
Keywords: Capacitance measurement
Issue Date: 15-Feb-1996
Citation: Ling, C.H.,Ang, D.S.,Dutoit, M. (1996-02-15). Extraction of channel length in 0.1 μm NMOSFET by gate to drain capacitance. Electronics Letters 32 (4) : 402-404. ScholarBank@NUS Repository.
Abstract: Applying a 100kHz, 25mV signal to the drain of a MOSFET, and measuring the resultant current at the gate, a gate to drain capacitance is obtained, from which the effective channel length can be extracted. This technique has been successively applied to a 0.1 × 2 μm2 device.
Source Title: Electronics Letters
ISSN: 00135194
Appears in Collections:Staff Publications

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