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https://scholarbank.nus.edu.sg/handle/10635/80412
| Title: | Extraction of channel length in 0.1 μm NMOSFET by gate to drain capacitance | Authors: | Ling, C.H. Ang, D.S. Dutoit, M. |
Keywords: | Capacitance measurement MOSFET |
Issue Date: | 15-Feb-1996 | Citation: | Ling, C.H.,Ang, D.S.,Dutoit, M. (1996-02-15). Extraction of channel length in 0.1 μm NMOSFET by gate to drain capacitance. Electronics Letters 32 (4) : 402-404. ScholarBank@NUS Repository. | Abstract: | Applying a 100kHz, 25mV signal to the drain of a MOSFET, and measuring the resultant current at the gate, a gate to drain capacitance is obtained, from which the effective channel length can be extracted. This technique has been successively applied to a 0.1 × 2 μm2 device. | Source Title: | Electronics Letters | URI: | http://scholarbank.nus.edu.sg/handle/10635/80412 | ISSN: | 00135194 |
| Appears in Collections: | Staff Publications |
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