Please use this identifier to cite or link to this item:
|Title:||Extraction of channel length in 0.1 μm NMOSFET by gate to drain capacitance|
|Authors:||Ling, C.H. |
|Source:||Ling, C.H.,Ang, D.S.,Dutoit, M. (1996-02-15). Extraction of channel length in 0.1 μm NMOSFET by gate to drain capacitance. Electronics Letters 32 (4) : 402-404. ScholarBank@NUS Repository.|
|Abstract:||Applying a 100kHz, 25mV signal to the drain of a MOSFET, and measuring the resultant current at the gate, a gate to drain capacitance is obtained, from which the effective channel length can be extracted. This technique has been successively applied to a 0.1 × 2 μm2 device.|
|Source Title:||Electronics Letters|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on Feb 16, 2018
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.