Please use this identifier to cite or link to this item: http://scholarbank.nus.edu.sg/handle/10635/80412
Title: Extraction of channel length in 0.1 μm NMOSFET by gate to drain capacitance
Authors: Ling, C.H. 
Ang, D.S. 
Dutoit, M.
Keywords: Capacitance measurement
MOSFET
Issue Date: 15-Feb-1996
Source: Ling, C.H.,Ang, D.S.,Dutoit, M. (1996-02-15). Extraction of channel length in 0.1 μm NMOSFET by gate to drain capacitance. Electronics Letters 32 (4) : 402-404. ScholarBank@NUS Repository.
Abstract: Applying a 100kHz, 25mV signal to the drain of a MOSFET, and measuring the resultant current at the gate, a gate to drain capacitance is obtained, from which the effective channel length can be extracted. This technique has been successively applied to a 0.1 × 2 μm2 device.
Source Title: Electronics Letters
URI: http://scholarbank.nus.edu.sg/handle/10635/80412
ISSN: 00135194
Appears in Collections:Staff Publications

Show full item record
Files in This Item:
There are no files associated with this item.

Page view(s)

21
checked on Feb 16, 2018

Google ScholarTM

Check


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.