Extraction of channel length in 0.1 μm NMOSFET by gate to drain capacitance

Please use this identifier to cite or link to this item: https://scholarbank.nus.edu.sg/handle/10635/80412

DC Field	Value
dc.title	Extraction of channel length in 0.1 μm NMOSFET by gate to drain capacitance
dc.contributor.author	Ling, C.H.
dc.contributor.author	Ang, D.S.
dc.contributor.author	Dutoit, M.
dc.date.accessioned	2014-10-07T02:57:15Z
dc.date.available	2014-10-07T02:57:15Z
dc.date.issued	1996-02-15
dc.identifier.citation	Ling, C.H.,Ang, D.S.,Dutoit, M. (1996-02-15). Extraction of channel length in 0.1 μm NMOSFET by gate to drain capacitance. Electronics Letters 32 (4) : 402-404. ScholarBank@NUS Repository.
dc.identifier.issn	00135194
dc.identifier.uri	http://scholarbank.nus.edu.sg/handle/10635/80412
dc.description.abstract	Applying a 100kHz, 25mV signal to the drain of a MOSFET, and measuring the resultant current at the gate, a gate to drain capacitance is obtained, from which the effective channel length can be extracted. This technique has been successively applied to a 0.1 × 2 μm2 device.
dc.source	Scopus
dc.subject	Capacitance measurement
dc.subject	MOSFET
dc.type	Article
dc.contributor.department	ELECTRICAL ENGINEERING
dc.description.sourcetitle	Electronics Letters
dc.description.volume	32
dc.description.issue	4
dc.description.page	402-404
dc.description.coden	ELLEA
dc.identifier.isiut	NOT_IN_WOS
Appears in Collections:	Staff Publications

There are no files associated with this item.

Check