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|Title:||Interfacial polarization in Al-Y2O3-SiO2-Si capacitor||Authors:||Ling, C.H.||Issue Date:||1-Jan-1993||Citation:||Ling, C.H. (1993-01-01). Interfacial polarization in Al-Y2O3-SiO2-Si capacitor. Electronics Letters 29 (19) : 1676-1678. ScholarBank@NUS Repository.||Abstract:||The variation by a factor of 2 in the observed permittivity of yttrium oxide film is explained in terms of interfacial polarization based on the Y2O3/SiO2 double-layer model. Provided the dielectric relaxation time constants of the two layers are grossly dissimilar, the model can also explain the frequency independence of the composite capacitor.||Source Title:||Electronics Letters||URI:||http://scholarbank.nus.edu.sg/handle/10635/80621||ISSN:||00135194|
|Appears in Collections:||Staff Publications|
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