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|Title:||Observation of a high-resistance to a low-resistance transition in a silicon bicrystal||Authors:||Ling, C.H.||Issue Date:||1987||Citation:||Ling, C.H. (1987). Observation of a high-resistance to a low-resistance transition in a silicon bicrystal. Journal of Applied Physics 62 (10) : 4291-4293. ScholarBank@NUS Repository.||Abstract:||The transition from a high-resistance to a low-resistance state has been observed in a silicon bicrystal. This phenomenon is attributed to the trapping of minority carriers at the grain-boundary interface states. In the low-resistance state, the dc resistance of different samples falls into a narrow range of values, and exhibits, in addition, a positive temperature coefficient.||Source Title:||Journal of Applied Physics||URI:||http://scholarbank.nus.edu.sg/handle/10635/62509||ISSN:||00218979|
|Appears in Collections:||Staff Publications|
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