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|Title:||Fowler-nordheim stress degradation in gate oxide: Results from gate-to-drain capacitance and charge pumping current||Authors:||Ling, C.H.
|Issue Date:||1997||Citation:||Ling, C.H., Goh, Y.H., Ooi, J.A. (1997). Fowler-nordheim stress degradation in gate oxide: Results from gate-to-drain capacitance and charge pumping current. IEEE Transactions on Electron Devices 44 (4) : 681-683. ScholarBank@NUS Repository. https://doi.org/10.1109/16.563376||Abstract:||The buildup of positive oxide charge and interface trap charge, due to Fowler-Nordheim stress, is observed in the gate-drain overlap region of the MOSFET. Results from gate-to-drain capacitance and charge pumping current show a steady increase in positive charge near the anode interface. Interface trap generation becomes significant when injected electron fluence exceeds ∼1014 cm-2, and dominates net charge creation at higher fluence. © 1997 IEEE.||Source Title:||IEEE Transactions on Electron Devices||URI:||http://scholarbank.nus.edu.sg/handle/10635/80451||ISSN:||00189383||DOI:||10.1109/16.563376|
|Appears in Collections:||Staff Publications|
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