Fowler-nordheim stress degradation in gate oxide: Results from gate-to-drain capacitance and charge pumping current

Please use this identifier to cite or link to this item: https://doi.org/10.1109/16.563376

Title:	Fowler-nordheim stress degradation in gate oxide: Results from gate-to-drain capacitance and charge pumping current
Authors:	Ling, C.H. Goh, Y.H. Ooi, J.A.
Issue Date:	1997
Citation:	Ling, C.H., Goh, Y.H., Ooi, J.A. (1997). Fowler-nordheim stress degradation in gate oxide: Results from gate-to-drain capacitance and charge pumping current. IEEE Transactions on Electron Devices 44 (4) : 681-683. ScholarBank@NUS Repository. https://doi.org/10.1109/16.563376
Abstract:	The buildup of positive oxide charge and interface trap charge, due to Fowler-Nordheim stress, is observed in the gate-drain overlap region of the MOSFET. Results from gate-to-drain capacitance and charge pumping current show a steady increase in positive charge near the anode interface. Interface trap generation becomes significant when injected electron fluence exceeds ∼1014 cm-2, and dominates net charge creation at higher fluence. © 1997 IEEE.
Source Title:	IEEE Transactions on Electron Devices
URI:	http://scholarbank.nus.edu.sg/handle/10635/80451
ISSN:	00189383
DOI:	10.1109/16.563376
Appears in Collections:	Staff Publications

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