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|Title:||Measurement of the current transient in Ta2O5 films||Authors:||Sundaram, K.
|Issue Date:||10-Aug-1993||Citation:||Sundaram, K.,Choi, W.K.,Ling, C.H. (1993-08-10). Measurement of the current transient in Ta2O5 films. Thin Solid Films 230 (2) : 95-98. ScholarBank@NUS Repository.||Abstract:||Current vs. time (I-t) measurements were performed on Ta2O5-based devices. Charge build-up at the Ta2O5/SiO2 interface was used to explain the transient. The interfacial charge density was calculated from the I-t curve and the maximum was found to be 398 nC cm-2 and 317 nC cm-2 for Al/Ta2O5/Si and Al/Ta2O5/SiO2/Si capacitors respectively. The value for MTOS was comparable with the value obtained by quasi-static measurements. © 1993.||Source Title:||Thin Solid Films||URI:||http://scholarbank.nus.edu.sg/handle/10635/80706||ISSN:||00406090|
|Appears in Collections:||Staff Publications|
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