Please use this identifier to cite or link to this item:
|Title:||Effects of measurement frequency and temperature anneal on differential gate capacitance spectra observed in hot carrier stressed MOSFET's||Authors:||Ling, C.H.
|Issue Date:||Aug-1995||Citation:||Ling, C.H., Ang, D.S., Tan, S.E. (1995-08). Effects of measurement frequency and temperature anneal on differential gate capacitance spectra observed in hot carrier stressed MOSFET's. IEEE Transactions on Electron Devices 42 (8) : 1528-1535. ScholarBank@NUS Repository. https://doi.org/10.1109/16.398669||Abstract:||Hot carrier generated fixed and interface traps, located at the Si-SiO2 interface near the drain junction are observed from the gate to - drain capacitance of the MOS transistor using an ac measurements signal applied to the drain. Observations show that when the channel is biased in inversion, the drain junction is forward biased and in channel depletion, the drain junction is reverse biased. Distinct peaks appeared on the differential capacitance spectrum which are attributed to the response of donor and acceptor interface traps located on either half of the band gap. The differential gate-to-drain capacitance allows the electrical identification of both donor and acceptor interface traps in the same device.||Source Title:||IEEE Transactions on Electron Devices||URI:||http://scholarbank.nus.edu.sg/handle/10635/80376||ISSN:||00189383||DOI:||10.1109/16.398669|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on Jan 16, 2022
WEB OF SCIENCETM
checked on Jan 7, 2022
checked on Jan 13, 2022
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.