Please use this identifier to cite or link to this item: https://doi.org/10.1109/16.398669
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dc.titleEffects of measurement frequency and temperature anneal on differential gate capacitance spectra observed in hot carrier stressed MOSFET's
dc.contributor.authorLing, C.H.
dc.contributor.authorAng, D.S.
dc.contributor.authorTan, S.E.
dc.date.accessioned2014-10-07T02:56:51Z
dc.date.available2014-10-07T02:56:51Z
dc.date.issued1995-08
dc.identifier.citationLing, C.H., Ang, D.S., Tan, S.E. (1995-08). Effects of measurement frequency and temperature anneal on differential gate capacitance spectra observed in hot carrier stressed MOSFET's. IEEE Transactions on Electron Devices 42 (8) : 1528-1535. ScholarBank@NUS Repository. https://doi.org/10.1109/16.398669
dc.identifier.issn00189383
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/80376
dc.description.abstractHot carrier generated fixed and interface traps, located at the Si-SiO2 interface near the drain junction are observed from the gate to - drain capacitance of the MOS transistor using an ac measurements signal applied to the drain. Observations show that when the channel is biased in inversion, the drain junction is forward biased and in channel depletion, the drain junction is reverse biased. Distinct peaks appeared on the differential capacitance spectrum which are attributed to the response of donor and acceptor interface traps located on either half of the band gap. The differential gate-to-drain capacitance allows the electrical identification of both donor and acceptor interface traps in the same device.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1109/16.398669
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentELECTRICAL ENGINEERING
dc.description.doi10.1109/16.398669
dc.description.sourcetitleIEEE Transactions on Electron Devices
dc.description.volume42
dc.description.issue8
dc.description.page1528-1535
dc.description.codenIETDA
dc.identifier.isiutA1995RJ15000018
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