Please use this identifier to cite or link to this item: https://scholarbank.nus.edu.sg/handle/10635/80684
Title: Logarithmic time dependence of pMOSFET degradation observed from gate capacitance
Authors: Ling, C.H. 
Yeow, Y.T.
Ah, L.K.
Yung, W.H.
Choi, W.K. 
Issue Date: 1-Jan-1993
Citation: Ling, C.H.,Yeow, Y.T.,Ah, L.K.,Yung, W.H.,Choi, W.K. (1993-01-01). Logarithmic time dependence of pMOSFET degradation observed from gate capacitance. Electronics Letters 29 (4) : 418-420. ScholarBank@NUS Repository.
Abstract: Hot-carrier degradation in pMOSFETs is observed from an increase in gate overlap capacitance, due to trapped electrons in the gate oxide inverting a portion of the channel near the stressed junction. Logarithmic time growth of the overlap capacitance, and hence of the trapped charge, is reported.
Source Title: Electronics Letters
URI: http://scholarbank.nus.edu.sg/handle/10635/80684
ISSN: 00135194
Appears in Collections:Staff Publications

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