Please use this identifier to cite or link to this item:
Title: Logarithmic time dependence of pMOSFET degradation observed from gate capacitance
Authors: Ling, C.H. 
Yeow, Y.T.
Ah, L.K.
Yung, W.H.
Choi, W.K. 
Issue Date: 1-Jan-1993
Citation: Ling, C.H.,Yeow, Y.T.,Ah, L.K.,Yung, W.H.,Choi, W.K. (1993-01-01). Logarithmic time dependence of pMOSFET degradation observed from gate capacitance. Electronics Letters 29 (4) : 418-420. ScholarBank@NUS Repository.
Abstract: Hot-carrier degradation in pMOSFETs is observed from an increase in gate overlap capacitance, due to trapped electrons in the gate oxide inverting a portion of the channel near the stressed junction. Logarithmic time growth of the overlap capacitance, and hence of the trapped charge, is reported.
Source Title: Electronics Letters
ISSN: 00135194
Appears in Collections:Staff Publications

Show full item record
Files in This Item:
There are no files associated with this item.

Page view(s)

checked on May 21, 2019

Google ScholarTM


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.