Please use this identifier to cite or link to this item:
|Title:||Logarithmic time dependence of pMOSFET degradation observed from gate capacitance||Authors:||Ling, C.H.
|Issue Date:||1-Jan-1993||Citation:||Ling, C.H.,Yeow, Y.T.,Ah, L.K.,Yung, W.H.,Choi, W.K. (1993-01-01). Logarithmic time dependence of pMOSFET degradation observed from gate capacitance. Electronics Letters 29 (4) : 418-420. ScholarBank@NUS Repository.||Abstract:||Hot-carrier degradation in pMOSFETs is observed from an increase in gate overlap capacitance, due to trapped electrons in the gate oxide inverting a portion of the channel near the stressed junction. Logarithmic time growth of the overlap capacitance, and hence of the trapped charge, is reported.||Source Title:||Electronics Letters||URI:||http://scholarbank.nus.edu.sg/handle/10635/80684||ISSN:||00135194|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.