Please use this identifier to cite or link to this item:
|Title:||Hot carrier degradation study in PMOSFET using gated-diode drain current and charge pumping measurements||Authors:||Goh, Y.H.
|Issue Date:||1997||Citation:||Goh, Y.H.,Ling, C.H. (1997). Hot carrier degradation study in PMOSFET using gated-diode drain current and charge pumping measurements. IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE : 23-27. ScholarBank@NUS Repository.||Abstract:||The forward gated-diode drain current characterized at low drain voltages and charge pumping current measurements are applied to pMOSFET's for investigating hot-carrier induced defects in the device. A linear relationship between the post-stress forward gated-diode drain current peaks and the corresponding charge pumping current peaks is obtained. Trapping of negative charge and generation of interface traps alter stress may be deduced from the gated-diode drain current characteristics. Logarithmic time degradation is observed from measurement of the increase in the forward gated-diode drain current peaks after stress.||Source Title:||IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE||URI:||http://scholarbank.nus.edu.sg/handle/10635/81458|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.