Please use this identifier to cite or link to this item: https://scholarbank.nus.edu.sg/handle/10635/81458
Title: Hot carrier degradation study in PMOSFET using gated-diode drain current and charge pumping measurements
Authors: Goh, Y.H.
Ling, C.H. 
Issue Date: 1997
Citation: Goh, Y.H.,Ling, C.H. (1997). Hot carrier degradation study in PMOSFET using gated-diode drain current and charge pumping measurements. IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE : 23-27. ScholarBank@NUS Repository.
Abstract: The forward gated-diode drain current characterized at low drain voltages and charge pumping current measurements are applied to pMOSFET's for investigating hot-carrier induced defects in the device. A linear relationship between the post-stress forward gated-diode drain current peaks and the corresponding charge pumping current peaks is obtained. Trapping of negative charge and generation of interface traps alter stress may be deduced from the gated-diode drain current characteristics. Logarithmic time degradation is observed from measurement of the increase in the forward gated-diode drain current peaks after stress.
Source Title: IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE
URI: http://scholarbank.nus.edu.sg/handle/10635/81458
Appears in Collections:Staff Publications

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