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Title: Hot-electron degradation in NMOSFET's: Results from temperature anneal
Authors: Ling, C.H. 
Ah, L.K.
Choi, W.K. 
Tan, S.E.
Ang, D.S. 
Issue Date: Jul-1994
Citation: Ling, C.H., Ah, L.K., Choi, W.K., Tan, S.E., Ang, D.S. (1994-07). Hot-electron degradation in NMOSFET's: Results from temperature anneal. IEEE Transactions on Electron Devices 41 (7) : 1303-1305. ScholarBank@NUS Repository.
Abstract: 0.6 μm N-channel MOSFET's are hot-electron stressed at Vg = Vd = 8 V, t = 103 s to produce large changes in device saturation drain current Id, linear channel conductance gd, maximum transconductance gm, subthreshold slope S, and threshold voltage shift Vt. Isochronal post-stress anneal up to 300 °C depopulates the trapped electrons, resulting in substantial recovery of the hot-electron degradation to within 10% of the pre-stress value. Gate-to-drain capacitance reveals that interface traps, which are also generated in significant numbers, are only partially annealed. These results provide direct confirmation that trapped electrons rather than interface traps are mainly responsible for degradation in the following NMOSFET device parameters: Id,gd,gm,S,Vt.
Source Title: IEEE Transactions on Electron Devices
ISSN: 00189383
DOI: 10.1109/16.293364
Appears in Collections:Staff Publications

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