Please use this identifier to cite or link to this item: https://doi.org/10.1109/16.293364
DC FieldValue
dc.titleHot-electron degradation in NMOSFET's: Results from temperature anneal
dc.contributor.authorLing, C.H.
dc.contributor.authorAh, L.K.
dc.contributor.authorChoi, W.K.
dc.contributor.authorTan, S.E.
dc.contributor.authorAng, D.S.
dc.date.accessioned2014-10-07T02:58:44Z
dc.date.available2014-10-07T02:58:44Z
dc.date.issued1994-07
dc.identifier.citationLing, C.H., Ah, L.K., Choi, W.K., Tan, S.E., Ang, D.S. (1994-07). Hot-electron degradation in NMOSFET's: Results from temperature anneal. IEEE Transactions on Electron Devices 41 (7) : 1303-1305. ScholarBank@NUS Repository. https://doi.org/10.1109/16.293364
dc.identifier.issn00189383
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/80548
dc.description.abstract0.6 μm N-channel MOSFET's are hot-electron stressed at Vg = Vd = 8 V, t = 103 s to produce large changes in device saturation drain current Id, linear channel conductance gd, maximum transconductance gm, subthreshold slope S, and threshold voltage shift Vt. Isochronal post-stress anneal up to 300 °C depopulates the trapped electrons, resulting in substantial recovery of the hot-electron degradation to within 10% of the pre-stress value. Gate-to-drain capacitance reveals that interface traps, which are also generated in significant numbers, are only partially annealed. These results provide direct confirmation that trapped electrons rather than interface traps are mainly responsible for degradation in the following NMOSFET device parameters: Id,gd,gm,S,Vt.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1109/16.293364
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentELECTRICAL ENGINEERING
dc.description.doi10.1109/16.293364
dc.description.sourcetitleIEEE Transactions on Electron Devices
dc.description.volume41
dc.description.issue7
dc.description.page1303-1305
dc.description.codenIETDA
dc.identifier.isiutA1994NV88600031
Appears in Collections:Staff Publications

Show simple item record
Files in This Item:
There are no files associated with this item.

SCOPUSTM   
Citations

4
checked on Aug 15, 2019

WEB OF SCIENCETM
Citations

5
checked on Aug 8, 2019

Page view(s)

43
checked on Aug 17, 2019

Google ScholarTM

Check

Altmetric


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.