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|Title:||Hot carrier degradation study in PMOSFET using gated-diode drain current and charge pumping measurements||Authors:||Goh, Y.H.
|Issue Date:||1997||Citation:||Goh, Y.H.,Ling, C.H. (1997). Hot carrier degradation study in PMOSFET using gated-diode drain current and charge pumping measurements. IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE : 23-27. ScholarBank@NUS Repository.||Abstract:||The forward gated-diode drain current characterized at low drain voltages and charge pumping current measurements are applied to pMOSFET's for investigating hot-carrier induced defects in the device. A linear relationship between the post-stress forward gated-diode drain current peaks and the corresponding charge pumping current peaks is obtained. Trapping of negative charge and generation of interface traps alter stress may be deduced from the gated-diode drain current characteristics. Logarithmic time degradation is observed from measurement of the increase in the forward gated-diode drain current peaks after stress.||Source Title:||IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE||URI:||http://scholarbank.nus.edu.sg/handle/10635/72676|
|Appears in Collections:||Staff Publications|
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