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Chen Jinghao

rp07243

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Full Name
Chen Jinghao
(not current staff)
Variants
Chen, J.H.
Chen, J.
 
Main Affiliation
 
Faculty
 
Email
elecjh@nus.edu.sg
 

Publications

Results 1-20 of 23 (Search time: 0.006 seconds).

Issue DateTitleAuthor(s)
12005Chemical vapor deposition of germanium nanocrystals on hafnium oxide for non-volatile memory applicationsWang, Y.Q.; Chen, J.H. ; Yoo, W.J. ; Yeo, Y.-C. 
215-Feb-1998Densification of radio frequency sputtered silicon oxide films by rapid thermal annealingChoi, W.K. ; Choo, C.K.; Han, K.K.; Chen, J.H. ; Loh, F.C. ; Tan, K.L. 
32004Effects of Annealing and Ar Ion Bombardment on the Removal of HfO 2 Gate DielectricChen, J. ; Yoo, W.J. ; Chan, D.S.H. ; Kwong, D.-L.
4Jan-2006Effects of N2, O2, and Ar plasma treatments on the removal of crystallized HfO2 filmChen, J. ; Yoo, W.J. ; Chan, D.S.H. 
51-Jul-2005Formation of dual-phase HfO 2-Hf xSi 1-xO 2 dielectric and its application in memory devicesWang, Y.Q.; Chen, J.H. ; Yoo, W.J. ; Yeo, Y.-C. ; Chin, A.; Du, A.Y.
628-Jun-2004Formation of Ge nanocrystals in HfAlO high-k dielectric and application in memory deviceWang, Y.Q.; Chen, J.H. ; Yoo, W.J. ; Yeo, Y.-C. ; Kim, S.J. ; Gupta, R.; Tan, Z.Y.L.; Kwong, D.-L.; Du, A.Y.; Balasubramanian, N.
7Jul-2003Formation of polycrystalline silicon germanium/HfO2 gate stack structure using inductively coupled plasma etchingChen, J. ; Tan, K.M.; Wu, N.; Yoo, W.J. ; Chan, D.S.H. 
82003High Performance ALD HfO 2-Al 2O 3 Laminate MIM Capacitors for RF and Mixed Signal IC ApplicationsHu, H.; Ding, S.-J. ; Lim, H.F. ; Zhu, C. ; Li, M.F. ; Kim, S.J. ; Yu, X.F.; Chen, J.H. ; Yong, Y.F.; Cho, B.J. ; Chan, D.S.H. ; Rustagi, S.C.; Yu, M.B.; Tung, C.H.; Du, A.; My, D.; Foo, P.D.; Chin, A.; Kwong, D.-L.
9Jul-2004Investigation of etching properties of HfO based high-K dielectrics using inductively coupled plasmaChen, J. ; Yoo, W.J. ; Tan, Z.Y.L.; Wang, Y.; Chan, D.S.H. 
10Jul-2005Investigation of etching properties of metal nitride/high-k gate stacks using inductively coupled plasmaHwang, W.S.; Chen, J. ; Yoo, W.J. ; Bliznetsov, V.
112006Investigation of wet etching properties and annealing effects of Hf-based high-k materialsChen, J. ; Jong Yoo, W. ; Chan, D.S.H. 
122005Long retention and low voltage operation using IrO2/HfAlO/HfSiO/ HfAlO gate stack for memory applicationWang, Y.Q.; Singh, P.K.; Yoo, W.J. ; Yeo, Y.C. ; Samudra, G. ; Chin, A.; Hwang, W.S.; Chen, J.H. ; Wang, S.J.; Kwong, D.-L.
13Oct-2004Low temperature MOSFET technology with Schottky barrier source/drain, high-K gate dielectric and metal gate electrodeZhu, S. ; Yu, H.Y. ; Chen, J.D. ; Whang, S.J. ; Chen, J.H. ; Shen, C.; Zhu, C. ; Lee, S.J. ; Li, M.F. ; Chan, D.S.H. ; Yoo, W.J. ; Du, A.; Tung, C.H.; Singh, J.; Chin, A.; Kwong, D.L.
1412-Feb-2009Nonvolatile Flash Memory Device and Method for Producing Dielectric Oxide Nanodots on Silicon DioxideCHEN JINGHAO ; YOO WON JONG ; CHAN SIU HUNG DANIEL 
15Nov-2004Nonvolatile flash memory device using Ge nanocrystals embedded in HfAlO High-κ tunneling and control oxides: Device fabrication and electrical performanceChen, J.H. ; Wang, Y.Q.; Yoo, W.J. ; Yeo, Y.-C. ; Samudra, G. ; Chan, D.S.H. ; Du, A.Y.; Kwong, D.-L.
16Apr-2003Physical and electrical characteristics of HfN gate electrode for advanced MOS devicesYu, H.Y. ; Lim, H.F. ; Chen, J.H. ; Li, M.F. ; Zhu, C. ; Tung, C.H.; Du, A.Y.; Wang, W.D.; Chi, D.Z.; Kwong, D.-L.
172003Robust HfN Metal Gate Electrode for Advanced MOS Devices ApplicationYu, H.Y. ; Lim, H.F. ; Chen, J.H. ; Li, M.F. ; Zhu, C.X. ; Kwong, D.-L.; Tung, C.H.; Bera, K.L.; Leo, C.J.
182004Schottky s/d MOSFETs with high-Kgate dielectrics and metal gate electrodesZhu, S. ; Chen, J. ; Yu, H.Y. ; Whang, S.J. ; Chen, J.H. ; Shen, C.; Li, M.F. ; Lee, S.J. ; Zhu, C. ; Chan, D.S.H. ; Du, A.; Tung, C.H.; Singh, J.; Chin, A.; Kwong, D.L.
19May-2004Schottky-barrier S/D MOSFETs with high-K gate dielectrics and metal-gate electrodeZhu, S. ; Yu, H.Y. ; Whang, S.J. ; Chen, J.H. ; Shen, C.; Zhu, C. ; Lee, S.J. ; Li, M.F. ; Chan, D.S.H. ; Yoo, W.J. ; Du, A.; Tung, C.H. ; Singh, J.; Chin, A.; Kwong, D.L.
2014-Feb-2005Self-assembly of Al2O3 nanodots on SiO2 using two-step controlled annealing technique for long retention nonvolatile memoriesChen, J.H. ; Yoo, W.J. ; Chan, D.S.H. ; Tang, L.-J.