Please use this identifier to cite or link to this item:
|Title:||Investigation of etching properties of metal nitride/high-k gate stacks using inductively coupled plasma||Authors:||Hwang, W.S.
|Issue Date:||Jul-2005||Citation:||Hwang, W.S., Chen, J., Yoo, W.J., Bliznetsov, V. (2005-07). Investigation of etching properties of metal nitride/high-k gate stacks using inductively coupled plasma. Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films 23 (4) : 964-970. ScholarBank@NUS Repository. https://doi.org/10.1116/1.1927536||Abstract:||Etching properties of metal nitrides (TaN, TiN, and HfN)/high dielectric constant material (Hf O2) gate stacks in Cl2 and HBr were investigated using inductively coupled plasma. The linear dependence of etch rates on the square root of bias voltage indicates the dominance of ion-induced etch mechanism of the metal nitrides. This phenomenon is well explained by internal binding energy of substrate, evaporation temperature, and Gibb's free energy (Δ Gf°) of formation of byproducts. The addition of O2 in Cl2 and HBr decreased etch rates of the metal nitrides and Hf O2; however, for O2 concentration lower than 1.5% in Cl2, a slight increase in etch rates of the metal nitrides was observed. X-ray photoelectron spectroscopy revealed that residues remain more on the sidewalls of gate stacks than the bottom of spaces between gates. The addition of O2 and the use of a Si O2 mask to increase etch selectivity of metal nitrides with respect to high- k dielectric increased surface roughness and formed micromasks on the etched surface. The optical emission signals from N, Cl, and Ta-Cl byproducts were sensitive enough to control the etch endpoints of the TaNHf O2 stack structures. © 2005 American Vacuum Society.||Source Title:||Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films||URI:||http://scholarbank.nus.edu.sg/handle/10635/70678||ISSN:||07342101||DOI:||10.1116/1.1927536|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on Oct 15, 2021
WEB OF SCIENCETM
checked on Oct 8, 2021
checked on Oct 14, 2021
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.