Please use this identifier to cite or link to this item:
https://doi.org/10.1063/1.1954870
Title: | Formation of dual-phase HfO 2-Hf xSi 1-xO 2 dielectric and its application in memory devices | Authors: | Wang, Y.Q. Chen, J.H. Yoo, W.J. Yeo, Y.-C. Chin, A. Du, A.Y. |
Issue Date: | 1-Jul-2005 | Citation: | Wang, Y.Q., Chen, J.H., Yoo, W.J., Yeo, Y.-C., Chin, A., Du, A.Y. (2005-07-01). Formation of dual-phase HfO 2-Hf xSi 1-xO 2 dielectric and its application in memory devices. Journal of Applied Physics 98 (1) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.1954870 | Abstract: | In this paper, we studied the phase-separation phenomenon of Hf0.5 Si0.5 O2 film deposited on Si O2 or sandwiched by Si O2, by x-ray photoelectron spectroscopy and transmission electron microscopy. The Hf0.5 Si0.5 O2 film underwent phase separation to form a doublet-phase Hf O2 - Hfx Si1-x O2 (x | Source Title: | Journal of Applied Physics | URI: | http://scholarbank.nus.edu.sg/handle/10635/82372 | ISSN: | 00218979 | DOI: | 10.1063/1.1954870 |
Appears in Collections: | Staff Publications |
Show full item record
Files in This Item:
There are no files associated with this item.
SCOPUSTM
Citations
17
checked on May 11, 2022
WEB OF SCIENCETM
Citations
17
checked on May 11, 2022
Page view(s)
196
checked on May 12, 2022
Google ScholarTM
Check
Altmetric
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.