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|Title:||Formation of dual-phase HfO 2-Hf xSi 1-xO 2 dielectric and its application in memory devices||Authors:||Wang, Y.Q.
|Issue Date:||1-Jul-2005||Citation:||Wang, Y.Q., Chen, J.H., Yoo, W.J., Yeo, Y.-C., Chin, A., Du, A.Y. (2005-07-01). Formation of dual-phase HfO 2-Hf xSi 1-xO 2 dielectric and its application in memory devices. Journal of Applied Physics 98 (1) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.1954870||Abstract:||In this paper, we studied the phase-separation phenomenon of Hf0.5 Si0.5 O2 film deposited on Si O2 or sandwiched by Si O2, by x-ray photoelectron spectroscopy and transmission electron microscopy. The Hf0.5 Si0.5 O2 film underwent phase separation to form a doublet-phase Hf O2 - Hfx Si1-x O2 (x||Source Title:||Journal of Applied Physics||URI:||http://scholarbank.nus.edu.sg/handle/10635/82372||ISSN:||00218979||DOI:||10.1063/1.1954870|
|Appears in Collections:||Staff Publications|
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