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Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.1954870
DC FieldValue
dc.titleFormation of dual-phase HfO 2-Hf xSi 1-xO 2 dielectric and its application in memory devices
dc.contributor.authorWang, Y.Q.
dc.contributor.authorChen, J.H.
dc.contributor.authorYoo, W.J.
dc.contributor.authorYeo, Y.-C.
dc.contributor.authorChin, A.
dc.contributor.authorDu, A.Y.
dc.date.accessioned2014-10-07T04:28:35Z
dc.date.available2014-10-07T04:28:35Z
dc.date.issued2005-07-01
dc.identifier.citationWang, Y.Q., Chen, J.H., Yoo, W.J., Yeo, Y.-C., Chin, A., Du, A.Y. (2005-07-01). Formation of dual-phase HfO 2-Hf xSi 1-xO 2 dielectric and its application in memory devices. Journal of Applied Physics 98 (1) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.1954870
dc.identifier.issn00218979
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/82372
dc.description.abstractIn this paper, we studied the phase-separation phenomenon of Hf0.5 Si0.5 O2 film deposited on Si O2 or sandwiched by Si O2, by x-ray photoelectron spectroscopy and transmission electron microscopy. The Hf0.5 Si0.5 O2 film underwent phase separation to form a doublet-phase Hf O2 - Hfx Si1-x O2 (x
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1063/1.1954870
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.doi10.1063/1.1954870
dc.description.sourcetitleJournal of Applied Physics
dc.description.volume98
dc.description.issue1
dc.description.page-
dc.description.codenJAPIA
dc.identifier.isiut000231062200046
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