Formation of dual-phase HfO 2-Hf xSi 1-xO 2 dielectric and its application in memory devices

Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.1954870

Title:	Formation of dual-phase HfO 2-Hf xSi 1-xO 2 dielectric and its application in memory devices
Authors:	Wang, Y.Q. Chen, J.H. Yoo, W.J. Yeo, Y.-C. Chin, A. Du, A.Y.
Issue Date:	1-Jul-2005
Citation:	Wang, Y.Q., Chen, J.H., Yoo, W.J., Yeo, Y.-C., Chin, A., Du, A.Y. (2005-07-01). Formation of dual-phase HfO 2-Hf xSi 1-xO 2 dielectric and its application in memory devices. Journal of Applied Physics 98 (1) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.1954870
Abstract:	In this paper, we studied the phase-separation phenomenon of Hf0.5 Si0.5 O2 film deposited on Si O2 or sandwiched by Si O2, by x-ray photoelectron spectroscopy and transmission electron microscopy. The Hf0.5 Si0.5 O2 film underwent phase separation to form a doublet-phase Hf O2 - Hfx Si1-x O2 (x
Source Title:	Journal of Applied Physics
URI:	http://scholarbank.nus.edu.sg/handle/10635/82372
ISSN:	00218979
DOI:	10.1063/1.1954870
Appears in Collections:	Staff Publications

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